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参数资料
| 型号： | TC4468CPD |
| 厂商： | Microchip Technology |
| 文件页数： | 17/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR QUAD AND 14DIP |
| 标准包装： | 30 |
| 配置： | 低端 |
| 输入类型： | 与 |
| 延迟时间： | 40ns |
| 电流 - 峰： | 1.2A |
| 配置数： | 4 |
| 输出数： | 4 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 14-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 14-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 671 (CN2011-ZH PDF) |
| 其它名称： | 158-1119 158-1119-ND TC4468CPDR TC4468CPDR-ND |
TC4467/TC4468/TC4469
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DS21425B-page17
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC4468CPD | 制造商:Microchip Technology Inc 功能描述:MOSFET Driver IC Number of Drivers:4 |
| TC4468CPD | 制造商:Microchip Technology Inc 功能描述:MOSFET Driver IC |
| TC4468EJD | 功能描述:功率驱动器IC 1.2A Quad AND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4468EOE | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4468EOE | 制造商:Microchip Technology Inc 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE 制造商:Microchip Technology Inc 功能描述:IC, MOSFET DRIVER, LOW-SIDE, SOIC-16 |
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