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参数资料
| 型号： | TC4468CPD |
| 厂商： | Microchip Technology |
| 文件页数： | 9/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR QUAD AND 14DIP |
| 标准包装： | 30 |
| 配置： | 低端 |
| 输入类型： | 与 |
| 延迟时间： | 40ns |
| 电流 - 峰： | 1.2A |
| 配置数： | 4 |
| 输出数： | 4 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 14-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 14-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 671 (CN2011-ZH PDF) |
| 其它名称： | 158-1119 158-1119-ND TC4468CPDR TC4468CPDR-ND |
TC4467/TC4468/TC4469
4.0
DETAILED DESCRIPTION
4.4
Power Dissipation
4.1
Supply Bypassing
The supply current versus frequency and supply
current versus capacitive load characteristic curves will
Large currents are required to charge and discharge
large capacitive loads quickly. For example, charging a
1000 pF load to 18 V in 25 nsec requires 0.72 A from
the device's power supply.
To ensure low supply impedance over a wide frequency
range, a 1 μF film capacitor in parallel with one or two
low-inductance, 0.1 μF ceramic disk capacitors with
short lead lengths (<0.5 in.) normally provide adequate
bypassing.
aid in determining power dissipation calculations.
Microchip Technology's CMOS drivers have greatly
reduced quiescent DC power consumption.
Input signal duty cycle, power supply voltage and load
type influence package power dissipation. Given power
dissipation and package thermal resistance, the maxi-
mum ambient operating temperature is easily
calculated. The 14-pin plastic package junction-to-
ambient thermal resistance is 83.3°C/W. At +70°C, the
4.2
Grounding
package is rated at 800 mW maximum dissipation.
Maximum allowable chip temperature is +150°C.
The TC4467 and TC4469 contain inverting drivers.
Potential drops developed in common ground
impedances from input to output will appear as
negative feedback and degrade switching speed
characteristics. Instead, individual ground returns for
input and output circuits, or a ground plane, should be
used.
Three components make up total package power
dissipation:
1. Load-caused dissipation (P L ).
2. Quiescent power (P Q ).
3. Transition power (P T ).
A capacitive-load-caused dissipation (driving MOSFET
gates), is a direct function of frequency, capacitive load
4.3
Input Stage
and supply voltage. The power dissipation is:
P L = fCV S
The input voltage level changes the no-load or
quiescent supply current. The N-channel MOSFET
input stage transistor drives a 2.5 mA current source
load. With logic “ 0 ” outputs, maximum quiescent supply
EQUATION
2
current is 4 mA. Logic “ 1 ” output level signals reduce
quiescent current to 1.4 mA, maximum. Unused driver
inputs must be connected to V DD or V SS . Minimum
power dissipation occurs for logic “ 1 ” outputs.
The drivers are designed with 50 mV of hysteresis,
which provides clean transitions and minimizes output
stage current spiking when changing states. Input volt-
age thresholds are approximately 1.5 V, making any
voltage greater than 1.5 V, up to V DD , a logic “ 1 ” input.
Input current is less than 1 μA over this range.
? 2002 Microchip Technology Inc.
f = Switching Frequency
C = Capacitive Load
V S = Supply Voltage
A resistive-load-caused dissipation for ground-
referenced loads is a function of duty cycle, load
current and load voltage. The power dissipation is:
EQUATION
P L = D ( V S – V L ) I L
D = Duty Cycle
V S = Supply Voltage
V L = Load Voltage
I L = Load Current
DS21425B-page 9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC4468CPD | 制造商:Microchip Technology Inc 功能描述:MOSFET Driver IC Number of Drivers:4 |
| TC4468CPD | 制造商:Microchip Technology Inc 功能描述:MOSFET Driver IC |
| TC4468EJD | 功能描述:功率驱动器IC 1.2A Quad AND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4468EOE | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4468EOE | 制造商:Microchip Technology Inc 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE 制造商:Microchip Technology Inc 功能描述:IC, MOSFET DRIVER, LOW-SIDE, SOIC-16 |
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