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参数资料
| 型号： | TC4626EOE |
| 厂商： | Microchip Technology |
| 文件页数： | 2/14页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR INV 1.5A 16SOIC |
| 标准包装： | 47 |
| 配置： | 高端或低端 |
| 输入类型： | 反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4 V ~ 6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
TC4626/TC4627
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
Absolute Maximum Ratings*
Supply Voltage ......................................................6.2V
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Input Voltage, Any Terminal
..................................... V S + 0.3V to GND – 0.3V
Package Power Dissipation (T A ≤ 70°C)
PDIP .........................................................730mW
CERDIP....................................................800mW
SOIC ........................................................760mW
Derating Factor PDIP .......5.6 mW/°C Above 36°C
CERDIP................................................6.0mW/°C
Operating Temperature Range (Ambient)
C Version......................................... 0°C to +70°C
E Version ...................................... -40°C to +85°C
M Version ................................... -55°C to +125°C
Storage Temperature Range .............. -65°C to +150°C
TC4626/TC4627 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: T A = +25°C, V DD = 5V, C 1 = C 2 = C 3 10 μ F unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
V IH
V IL
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
2.4
—
—
—
—
0.8
V
V
I IN
Input Current
-1
—
1
μ A
0V ≤ V IN ≤ V DRIVE
Output
V OH
V OL
High Output Voltage
Low Output Voltage
V BOOST – 0.025
—
—
—
—
0.025
V
V
R O
R O
I PK
Output Resistance, High
Output Resistance, Low
Peak Output Current
—
—
—
10
8
1.5
15
10
—
?
?
A
I OUT = 10mA, V DD = 5V
I OUT = 10mA, V DD = 5V
Switching Time
t R
t F
t D1
t D2
F MAX
Rise Time
Fall Time
Delay Time
Delay Time
Maximum Switching Frequency
—
—
—
—
1.0
33
27
35
45
—
40
35
45
55
—
nsec
nsec
nsec
nsec
MHz
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
V DD = 5V, V BOOST > 8.5V,
Figure 3-1
Voltage Booster
R 3
Voltage Tripler Output
—
300
400
?
I L = 10mA, V DD = 5V
Source Resistance
R 2
Voltage Doubler Output
—
120
200
?
Source Resistance
F OSC
Oscillator Frequency
12
—
28
kHz
V OSC
Oscillator Amplitude Measured
4.5
—
10
V
R LOAD = 10k ?
at C1-
UV @V BOOST
V START @V BOOST
Undervoltage Threshold
Start Up Voltage
7.0
10.5
7.8
11.3
8.5
12
V
V
V BOOST
@V DD = 5V
14.6
—
—
V
No Load
DS21426B-page 2
2002 Microchip Technology Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC4626EOE | 制造商:Microchip Technology Inc 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE 制造商:Microchip Technology Inc 功能描述:IC, MOSFET DRIVER HIGH/LOW-SIDE, SOIC-16 |
| TC4626EOE713 | 功能描述:功率驱动器IC 1.5A W/Boost Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4626EPA | 功能描述:功率驱动器IC 1.5A W/Boost Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4626MJA | 功能描述:功率驱动器IC 1.5A W/Boost Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4627 | 制造商:TELCOM 制造商全称:TelCom Semiconductor, Inc 功能描述:POWER CMOS DRIVERS WITH VOLTAGE TRIPLER |
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