参数资料
型号: TC4626EOE
厂商: Microchip Technology
文件页数: 7/14页
文件大小: 0K
描述: IC MOSFET DVR INV 1.5A 16SOIC
标准包装: 47
配置: 高端或低端
输入类型: 反相
延迟时间: 35ns
电流 - 峰: 1.5A
配置数: 1
输出数: 1
电源电压: 4 V ~ 6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC
包装: 管件
TC4626/TC4627
4.0
Note:
TYPICAL CHARACTERISTICS
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
TC4626 V OH vs. Frequency
TC4626 V OH vs. Frequency
16
14
470pF
V S = 5V
T A = -55 ° C
14
12
470pF
V S = 5V
T A = 25 ° C
12
10
8
2200pF
1000pF
10
8
6
4
2
6
4
2
2200pF
1000pF
0
5
500 1,000 1,500 2,000 2,500 3,000 3,500
0
10
500 1,000 1,500 2,000 2,500 3,000 3,500
14
FREQUENCY (kHz)
TC4626 V OH vs. Frequency
100
FREQUENCY (kHz)
Delay Time vs. Temperature
12
10
4 70pF
V S = 5V
T A = 125 ° C
80
Input = 0-5V;
T R & T F <10nsec;
@ <20kHz
t D2
V S = 4V
C LOAD = 1000pF
8
6
60
t D1
4
2200p F
1000pF
40
t RISE
2
0
20
0
t FALL
5
500 1,000 1,500 2,000 2,500 3,000 3,500
-40 -20
0
20
40
60
80 100 120
FREQUENCY (kHz)
Delay Time vs. Temperature
TEMPERATURE ( ° C)
Delay Time vs. Temperature
60
50
40
30
V S = 5V
C LOAD = 1000pF
t D2
t D1
50
40
30
V S = 6V
C LOAD = 1000pF
t D2
t D1
20
10
t FALL
t RISE
Input = 0-5V;
T R & T F <10nsec;
@ <20kHz
20
10
t FALL
t RISE
Input = 0-5V;
T R & T F <10nsec;
@ <20kHz
0
0
-40
-20
0
20
40
60
80
100 120
-40
-20
0
20
40
60
80
100 120
TEMPERATURE ( ° C)
2002 Microchip Technology Inc.
TEMPERATURE ( ° C)
DS21426B-page 7
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相关代理商/技术参数
参数描述
TC4626EOE 制造商:Microchip Technology Inc 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE 制造商:Microchip Technology Inc 功能描述:IC, MOSFET DRIVER HIGH/LOW-SIDE, SOIC-16
TC4626EOE713 功能描述:功率驱动器IC 1.5A W/Boost Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4626EPA 功能描述:功率驱动器IC 1.5A W/Boost Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4626MJA 功能描述:功率驱动器IC 1.5A W/Boost Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4627 制造商:TELCOM 制造商全称:TelCom Semiconductor, Inc 功能描述:POWER CMOS DRIVERS WITH VOLTAGE TRIPLER