参数资料
型号: TC649BEUATR
元件分类: 运动控制电子
英文描述: BRUSHLESS DC MOTOR CONTROLLER, PDSO8
封装: PLASTIC, MSOP-8
文件页数: 15/36页
文件大小: 704K
代理商: TC649BEUATR
TC646B/TC648B/TC649B
DS21755B-page 22
2003 Microchip Technology Inc.
FIGURE 5-7:
Output Drive Device Configurations.
TABLE 5-2:
FAN DRIVE DEVICE SELECTION TABLE (NOTE 2)
5.6
Bias Supply Bypassing and Noise
Filtering
The bias supply (VDD) for the TC646B/TC648B/
TC649B devices should be bypassed with a 1.0 F
ceramic capacitor. This capacitor will help supply the
peak currents that are required to drive the base/gate
of the external fan drive devices.
As the VIN pin controls the duty cycle in a linear fashion,
any noise on this pin can cause duty cycle jittering. For
this reason, the VIN pin should be bypassed with a
0.01 F capacitor.
In order to keep fan noise off of the TC646B/TC648B/
TC649B device ground, individual ground returns for
the TC646B/TC648B/TC649B and the low side of the
fan current sense resistor should be used.
5.7
Design Example/Typical
Application
The system has been designed with the following
components and criteria:
System inlet air ambient temperature ranges from 0C
to 50C. At 20C, system cooling is no longer required,
so the fan is to be turned off. Prior to turn-off, the fan
should be run at 40% of its full fan speed. Full fan
speed should be reached when the ambient air is 40C.
The system has a surface mount, NTC-style thermistor
in a 1206 package. The thermistor is mounted on a
daughtercard that is directly in the inlet air stream. The
thermistor is a NTC, 100 k
@ 25C, Thermometrics
part number NHQ104B425R5. The given Beta for the
thermistor is 4250. The system bias voltage to run the
fan controller is 5V, while the fan voltage is 12V.
Device
Package
Max Vbe sat /
Vgs(V)
Min hfe
VCE/VDS
(V)
Fan Current
(mA)
Suggested
Rbase (
)
MMBT2222A
SOT-23
1.2
50
40
150
800
MPS2222A
TO-92
1.2
50
40
150
800
MPS6602
TO-92
1.2
50
40
500
301
SI2302
SOT-23
2.5
NA
20
500
MGSF1N02E
SOT-23
2.5
NA
20
500
SI4410
SO-8
4.5
NA
30
1000
SI2308
SOT-23
4.5
NA
60
500
Note 1:
A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times.
2:
These drive devices are suggestions only. Fan currents listed are for individual fans.
Q1
GND
Fan Bias
RSENSE
RBASE
VOUT
FAN
a) Single Bipolar Transistor
Q1
GND
Fan Bias
RSENSE
VOUT
b) N-Channel MOSFET
FAN
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