参数资料
型号: TC649BEUATR
元件分类: 运动控制电子
英文描述: BRUSHLESS DC MOTOR CONTROLLER, PDSO8
封装: PLASTIC, MSOP-8
文件页数: 19/36页
文件大小: 704K
代理商: TC649BEUATR
TC646B/TC648B/TC649B
DS21755B-page 26
2003 Microchip Technology Inc.
FIGURE 5-13:
Design Example Schematic.
Bypass capacitor CVDD is added to the design to
decouple the bias voltage. This is good to have, espe-
cially when using a MOSFET as the drive device. This
helps to give a localized low-impedance source for the
current required to charge the gate capacitance of Q1.
Two other bypass capacitors (labeled as CB) were also
added to decouple the VIN and VAS nodes. These were
added simply to remove any noise present that might
cause false triggerings or PWM jitter. R5 is the pull-up
resistor for the FAULT output. The value for this resistor
is system-dependent.
FAULT
SENSE
R1
R2
R3
32.4 k
R4
GND
Q1
+12V
+5V
VDD
VIN
VAS
VOUT
RSENSE
CSENSE
CF
1.0 F
CF
TC649B
Fan
CB
0.01 F
CB
0.01 F
+
4
5
7
6
8
1
3
2
+5V
17.8 k
237 k
45.3k
R5
10 k
0.1 F
SI2302
or
MGSF1N02E
Panasonic
12V, 140 mA
FBA06T12H
Thermometrics
100 k
@25°C
NHQ104B425R5
1.0 F
3.0
CVDD
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