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参数资料
| 型号： | TDA4866J |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 偏转 |
| 英文描述： | VERTICAL DEFLECTION IC, PZIP9 |
| 封装： | POWER, PLASTIC, SOT-523-1, DIL-BENT-SIL, 9 PIN |
| 文件页数： | 17/20页 |
| 文件大小： | 108K |
| 代理商： | TDA4866J |
2001 Aug 07
6
Philips Semiconductors
Product specication
Full bridge current driven vertical deection
booster
TDA4866
THERMAL CHARACTERISTICS
Note
1. To minimize the thermal resistance from mounting base to heatsink [Rth(mb-h)] (DBS version) follow the
recommended mounting instruction: screw mounting preferred; torque = 40 Ncm; use heatsink compound.
CHARACTERISTICS
VP = 15 V; Tamb =25 °C; VFB = 40 V; voltages referenced to pin 5 (GND); parameters are measured in test circuit
(see Fig.6); unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-mb)
thermal resistance from junction to mounting base
TDA4866 (SIL version)
4
K/W
TDA4866J (DBS version)
note 1
4
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage (pin 3)
8.2
25
V
VFB
yback supply voltage (pin 7)
note 1
VP +6
60
V
IFB
quiescent feedback current (pin 7)
no load; no signal
710
mA
Input stage
Iid(p-p)
differential input current (Iid =I1 I2)
(peak-to-peak value)
±500
±600
A
I1, 2(p-p)
single ended input current
(peak-to-peak value)
note 2
0
±300
±600
A
CMRR
common mode rejection ratio
note 3
54
dB
V1
input clamp voltage
I1 = 300 A
2.7
3.0
3.3
V
V2
input clamp voltage
I2 = 300 A
2.7
3.0
3.3
V
TCi,1
input clamp signal TC on pin 1
0
±800
V/K
TCi,2
input clamp signal TC on pin 2
0
±800
V/K
V1 V2
differential input voltage
Iid =0
0
±10
mV
I9
feedback current
±500
±600
A
V9
feedback voltage
1
VP 1V
Iid(offset)
differential input offset current
(Iid(offset) =I1 I2)
Ide = 0; Rref = 1.5 k;
Rm =1
0
±20
A
Ci INA
input capacity pin 1 referenced to GND
5pF
Ci INB
input capacity pin 2 referenced to GND
5pF
Output stages A and B
I4
output current
±1A
I6
output current
±1A
V6
output A saturation voltage to GND
I6 = 0.7 A
1.3
1.5
V
I6 = 1.0 A
1.6
1.8
V
V6,3
output A saturation voltage to VP
I6 = 0.7 A
2.3
2.9
V
I6 = 1.0 A
2.7
3.3
V
V4
output B saturation voltage to GND
I4 = 0.7 A
1.3
1.5
V
I4 = 1.0 A
1.6
1.8
V
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