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参数资料
| 型号： | TDA8920TH/N1,118 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 80 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO24 |
| 封装： | PLASTIC, SOT-566-3, HSOP-24 |
| 文件页数： | 3/36页 |
| 文件大小： | 733K |
| 代理商： | TDA8920TH/N1,118 |
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2002 Sep 25
11
Philips Semiconductors
Product specication
2
× 80 W class-D power amplier
TDA8920
9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. See also Section 16.6.
2. Human Body Model (HBM); Rs = 1500 ; C = 100 pF.
3. Machine Model (MM); Rs =10 ; C = 200 pF; L = 0.75 mH.
10 THERMAL CHARACTERISTICS
Note
1. See also Section 16.5.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VP
supply voltage
±30
V
Vms
mode select switch input voltage
with respect to SGND
5.5
V
Vsc
short-circuit voltage of output pins
±30
V
IORM
repetitive peak current in output pin
note 1
7.5
A
Tstg
storage temperature
55
+150
°C
Tamb
ambient temperature
40
+85
°C
Tvj
virtual junction temperature
150
°C
Ves(HBM)
electrostatic discharge voltage (HBM) note 2
all pins with respect to VDD (class 1a)
1500 +1500 V
all pins with respect to SGND (class 1a)
1500 +1500 V
all pins with respect to VSS (class 1a)
1500 +1500 V
all pins (except pin 19) with respect to
each other (class 1a)
1500 +1500 V
pin 19 (HW) with respect to all other pins
500
+500
V
Ves(MM)
electrostatic discharge voltage (MM)
note 3
all pins with respect to VDD (class B)
250
+250
V
all pins with respect to SGND (class B)
250
+250
V
all pins with respect to VSS (class A1)
150
+150
V
all pins with respect to each other
(class A1)
100
+100
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air; note 1
35
K/W
Rth(j-c)
thermal resistance from junction to case
note 1
1.3
K/W
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