- 您现在的位置：买卖IC网 > PDF目录384968 > TE28F008B3B120 (INTEL CORP) SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE PDF资料下载
参数资料
| 型号： | TE28F008B3B120 |
| 厂商： | INTEL CORP |
| 元件分类： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| 中文描述： | 1M X 8 FLASH 3V PROM, 120 ns, PDSO40 |
| 封装： | 10 X 20 MM, TSOP-40 |
| 文件页数： | 19/49页 |
| 文件大小： | 408K |
| 代理商： | TE28F008B3B120 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页当前第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页
E
3.2.5
SMART 3 ADVANCED BOOT BLOCK
–BYTE-WIDE
19
PRELIMINARY
ERASE MODE
To erase a block, write the Erase Set-up and Erase
Confirm commands to the CUI, along with an
address identifying the block to be erased. This
address is latched internally when the Erase
Confirm command is issued. Block erasure results
in all bits within the block being set to
“1.” Only one
block can be erased at a time.
The WSM will execute the following sequence of
internally timed events to:
1.
2.
Program all bits within the block to “0.”
Verify that all bits within the block are
sufficiently programmed to “0.”
Erase all bits within the block to “1.”
Verify that all bits within the block are
sufficiently erased.
3.
4.
While the erase sequence is executing, bit 7 of the
status register is a “0.”
When the status register indicates that erasure is
complete, check the Erase Status bit to verify that
the erase operation was successful. If the Erase
operation was unsuccessful, SR.5 of the status
register will be set to a “1,” indicating an erase
error. If V
was not within acceptable limits after
the Erase Confirm command was issued, the WSM
will not execute the erase sequence; instead, SR.5
of the status register is set to indicate an erase
error, and SR.3 is set to a “1” to identify that V
PP
supply voltage was not within acceptable limits.
After an erase operation, clear the Status Register
(50H) before attempting the next operation. Any
CUI instruction can follow after erasure is
completed; however, to prevent inadvertent status
register reads, it is advisable to reset the flash to
read array after the erase is complete.
3.2.5.1
Suspending and Resuming Erase
Since an erase operation requires on the order of
seconds to complete, an Erase Suspend command
is provided to allow erase-sequence interruption in
order to read data from or program data to another
block in memory. Once the erase sequence is
started, writing the Erase Suspend command to the
CUI requests that the WSM pause the erase
sequence at a predetermined point in the erase
algorithm. The status register will indicate if/when
the erase operation has been suspended.
A Read Array/Program command can now be
written to the CUI in order to read/write data from/to
blocks other than that which is suspended. The
Program
command
can
suspended to read yet another array location. The
only valid commands while erase is suspended are
Erase Resume, Program, Program Resume, Read
Array, or Read Status Register.
subsequently
be
During erase suspend mode, the chip can be
placed in a pseudo-standby mode by taking CE# to
V
IH
. This reduces active current consumption.
Erase Resume continues the erase sequence when
CE# = V
IL
. As with the end of a standard erase
operation, the status register must be read and
cleared before the next instruction is issued.
3.2.5.2
V
PP
Supply Voltage during Erase
V
PP
supply voltage considerations are outlined in
Section 3.4.
相关PDF资料 |
PDF描述 |
|---|---|
| TE28F008B3B150 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F008B3T120 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F008B3T150 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3B150 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3T120 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TE28F008B3B150 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F008B3B90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3BA110 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F008B3BA90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3T110 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述: |
发布紧急采购，3分钟左右您将得到回复。