参数资料
型号: TE28F008B3B120
厂商: INTEL CORP
元件分类: DRAM
英文描述: SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
中文描述: 1M X 8 FLASH 3V PROM, 120 ns, PDSO40
封装: 10 X 20 MM, TSOP-40
文件页数: 4/49页
文件大小: 408K
代理商: TE28F008B3B120
SMART 3 ADVANCED BOOT BLOCK
–BYTE-WIDE
E
4
PRELIMINARY
REVISION HISTORY
Number
Description
-001
Original version
相关PDF资料
PDF描述
TE28F008B3B150 SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
TE28F008B3T120 SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
TE28F008B3T150 SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
TE28F016B3B150 SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
TE28F016B3T120 SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
相关代理商/技术参数
参数描述
TE28F008B3B150 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
TE28F008B3B90 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F008B3BA110 制造商:INTEL 制造商全称:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F008B3BA90 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F008B3T110 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述: