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| 型号： | TE28F008B3T120 |
| 厂商： | INTEL CORP |
| 元件分类： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| 中文描述： | 1M X 8 FLASH 3V PROM, 120 ns, PDSO40 |
| 封装： | 10 X 20 MM, TSOP-40 |
| 文件页数： | 34/49页 |
| 文件大小： | 408K |
| 代理商： | TE28F008B3T120 |
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SMART 3 ADVANCED BOOT BLOCK
–BYTE-WIDE
E
34
PRELIMINARY
6.0
OPERATING CONDITIONS (V
CCQ
= 1.8V
–2.2V)
Table 12. Temperature and V
CC
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
T
A
Operating Temperature
–40
+85
°C
V
CC1
2.7V–2.85V V
CC
Supply Voltage
1
2.7
2.85
Volts
V
CC2
2.7V–3.3V V
CC
Supply Voltage
1
2.7
3.3
Volts
V
CCQ
1.8V–2.2V I/O Supply Voltage
1,4
1.8
2.2
Volts
V
PP1
Program and Erase Voltage
1
2.7
2.85
Volts
V
PP2
1
2.7
3.3
Volts
V
PP3
1,2
11.4
12.6
Volts
Cycling
Block Erase Cycling
3
10,000
Cycles
NOTES:
1.
2.
See DC Characteristics tables for voltage range-specific specifications.
Applying V
= 11.4V
–12.6V during program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter. V
PP
may be connected to 12V for a total of 80 hours maximum. See Section 3.4 for
details.
For operating temperatures of –25
°
C– +85
°
C the device is projected to have a minimum block erase cycling of 10,000 to
30,000 cycles.
The voltage swing on the inputs, V
IN
is required to match V
CCQ
.
3.
4.
6.1
DC Characteristics: V
CCQ
= 1.8V
–2.2V
These tables are valid for the following power supply combinations only:
1.
2.
V
CC1
and V
CCQ
and (V
PP1
or V
PP3
)
V
CC2
and V
CCQ
and (V
PP2
or V
PP3
)
Wherever the input voltage V
IN
is mentioned, it is required that V
IN
matches the chosen V
CCQ
.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TE28F008B3T150 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F008B3T90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3TA110 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F008B3TA90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F008BEB120 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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