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参数资料
| 型号： | TE28F016B3B120 |
| 厂商： | INTEL CORP |
| 元件分类： | DRAM |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 2M X 8 FLASH 3V PROM, 120 ns, PDSO40 |
| 封装： | 10 X 20 MM, TSOP-40 |
| 文件页数： | 18/49页 |
| 文件大小： | 408K |
| 代理商： | TE28F016B3B120 |
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SMART 3 ADVANCED BOOT BLOCK
–BYTE-WIDE
E
18
PRELIMINARY
When the WSM is active, bit 7 (SR.7) of the status
register will indicate the status of the WSM; the
remaining bits in the status register indicate
whether or not the WSM was successful in
performing the desired operation (see Table 7).
3.2.3.1
Clearing the Status Register
The WSM sets status bits 1 through 7 to
“1,” and
clears bits 2, 6 and 7
to “0,” but cannot clear status
bits 1 or 3 through 5 to “0.” Because bits 1, 3, 4,
and 5 indicate various error conditions, these bits
can only be cleared by the controlling CPU through
the use of the Clear Status Register (50H)
command. By allowing the system software to
control the resetting of these bits, several
operations may be performed (such as cumulatively
programming several addresses or erasing multiple
blocks in sequence) before reading the status
register to determine if an error occurred during that
series. Clear the Status Register before beginning
another command or sequence. Note, again, that
the Read Array command must be issued before
data can be read from the memory array.
3.2.4
PROGRAM MODE
Programming is executed using a two-write
sequence. The Program Setup command (40H) is
written to the CUI followed by a second write which
specifies the address and data to be programmed.
The WSM will execute the following sequence of
internally timed events:
1.
Program the desired bits of the addressed
memory.
Verify that the desired bits are sufficiently
programmed.
2.
Programming of the memory results in specific bits
within an address location being changed to a “0.” If
the user attempts to program “1”s, there will be no
change of the memory cell contents and no error
occurs.
The status register indicates programming status:
while the program sequence is executing, bit 7 of
the status register is a “0.” The status register can
be polled by toggling either CE# or OE#. While
programming, the only valid commands are Read
Status Register, Program Suspend, and Program
Resume.
When programming is complete, the Program
Status bits should be checked. If the programming
operation was unsuccessful, bit SR.4 of the status
register is set to indicate a program failure. If SR.3
is set then V
PP
was not within acceptable limits, and
the WSM did not execute the program command. If
SR.1 is set, a program operation was attempted to
a locked block and the operation was aborted.
The status register should be cleared before
attempting the next operation. Any CUI instruction
can follow after programming is completed;
however, to prevent inadvertent status register
reads, be sure to reset the CUI to read array mode.
3.2.4.1
Suspending and Resuming
Program
The Program Suspend command allows program
suspension in order to read data in other locations
of memory. Once the programming process starts,
writing the Program Suspend command to the CUI
requests that the WSM suspend the program
sequence (at predetermined points in the program
algorithm). The device continues to output status
register data after the Program Suspend command
is written. Polling status register bits SR.7 and SR.2
will determine when the program operation has
been suspended (both will be set to “1”).
t
WHRH1
/t
EHRH1
specify the program suspend latency.
A Read Array command can now be written to the
CUI to read data from blocks other than that which
is suspended. The only other valid commands,
while program is suspended, are Read Status
Register and Program Resume. After the Program
Resume command is written to the flash memory,
the WSM will continue with the program process
and status register bits SR.2 and SR.7 will
automatically be cleared. After the Program
Resume
command
is
automatically outputs status register data when
read (see Figure 7, Program Suspend/Resume
Flowchart). V
must remain at the same V
PP
level
used for program while in program suspend mode.
RP# must also remain at V
IH.
written,
the
device
3.2.4.2
V
Supply Voltage during
Program
V
PP
supply voltage considerations are outlined in
Section 3.4.
相关PDF资料 |
PDF描述 |
|---|---|
| TE28F008B3B120 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F008B3B150 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F008B3T120 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F008B3T150 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3B150 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TE28F016B3B150 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| TE28F016B3B90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F016B3BA110 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F016B3BA90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F016B3T110 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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