参数资料
型号: TEA1612T
厂商: NXP SEMICONDUCTORS
元件分类: 模拟信号调理
英文描述: SPECIALTY ANALOG CIRCUIT, PDSO24
封装: 7.50 MM, PLASTIC, MS-013, SOT137-1, SOP-24
文件页数: 1/19页
文件大小: 108K
代理商: TEA1612T
1.
General description
The TEA1612T is a monolithic integrated circuit implemented in a high-voltage double
Diffused Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage
controller for a zero-voltage switching resonant converter. The IC provides the drive
function for two discrete power MOSFETs in a half-bridge conguration. It also includes a
level-shift circuit, an oscillator with an accurately-programmable frequency range, a
latched shut-down function, burst mode operation and a transconductance error amplier.
The oscillator signal passes through a divide-by-two ip-op before being fed to the output
drivers in order to guarantee an accurate 50 % switching duty factor.
The circuit is very exible and enables a broad range of applications for different mains
voltages.
2.
Features
I Adjustable burst mode operation at low loads for low standby power
I Integrated high voltage level-shift function
I Integrated high voltage bootstrap diode
I Low start-up current
I Adjustable non-overlap time
I Internal Over Temperature Protection (OTP)
I Over Current Protection (OCP) that activates a shut-down timer
TEA1612T
Zero voltage switching resonant converter controller
Rev. 01 — 24 September 2009
Product data sheet
Fig 1.
Basic conguration
HALF-
BRIDGE
CIRCUIT
RESONANT
CONVERTER
TEA1612T
Vdrv(hs)
VDD
MOSFET
SWITCH
bridge voltage
supply
(high side)
signal
ground
power ground
014aaa825
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