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参数资料
| 型号： | TEMD1020 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon PIN Photodiode |
| 中文描述： | 硅PIN光电二极管 |
| 文件页数： | 1/10页 |
| 文件大小： | 465K |
| 代理商： | TEMD1020 |
VISHAY
TEMD1000/1020/1030/1040
Vishay Semiconductors
Document Number 81564
Rev. 9, 21-May-03
www.vishay.com
1
18029
TEMD1000
TEMD1030
TEMD1040
TEMD1020
Silicon PIN Photodiode
Description
TEMD1000 series are high speed silicon PIN photo-
diodes molded in SMT package with dome lens.
Due to integrated Daylight filter devices are sensitive
for IR radiation only.
High on axis sensitivity is provided by a viewing angle
of ± 15°.
Features
Extra fast response times
Radiant sensitive area A = 0.25 mm
2
Daylight filter
Versatile terminal configurations
Package matched to IR Emitter series
TSMF1000 and TSML1000
Angle of half sensitivity
= ± 15°
Applications
High speed detector for SMT
IR Detector for Daylight application
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Basic Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Test condition
Symbol
V
R
P
V
T
j
T
stg
T
stg
T
sd
Value
60
Unit
V
Power Dissipation
T
amb
≤
25 °C
75
mW
Junction Temperature
100
°C
Storage Temperature Range
- 40 to + 100
°C
Operating Temperature Range
- 40 to + 85
°C
Soldering Temperature
t
≤
5 s
<260
°C
Test condition
Symbol
V
F
V
(BR)
I
ro
C
D
I
ra
Min
Typ.
1.0
Max
1.3
Unit
V
I
F
= 50 mA
I
R
= 100
μ
A, E = 0
V
R
= 10 V, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
,
λ
= 870 nm, V
R
= 5 V
E
e
= 1 mW/cm
2
,
λ
= 950 nm, V
R
= 5 V
V
R
= 5 V,
λ
= 870 nm
V
R
= 5 V,
λ
= 870 nm
V
R
= 5 V,
λ
= 950 nm
Breakdown Voltage
60
V
Reverse Dark Current
1
10
nA
Diode Capacitance
1.8
pF
μ
A
Reverse Light Current
10
I
ra
5
12
μ
A
Temp. Coefficient of I
ra
Absolute Spectral Sensitivity
TK
Ira
s(
λ
)
s(
λ
)
λ
p
0.2
%/K
0.60
A/W
0.55
A/W
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
±15
900
deg
nm
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TEMD1030 | 功能描述:光电二极管 60V 75mW 940nm RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5 |
| TEMD1040 | 功能描述:光电二极管 60V 75mW 940nm RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5 |
| TEMD2100GS08 | 制造商:Vishay Semiconductors 功能描述:STD.FOTO DIODE, SOT23 - Tape and Reel |
| TEMD5 | 制造商:ROHM 制造商全称:Rohm 功能描述:Packaging specifications |
| TEMD5000 | 功能描述:光电二极管 65 Degree 215mW RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5 |
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