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参数资料
| 型号： | TEMT1000 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | 硅npn型光电晶体管 |
| 文件页数： | 2/5页 |
| 文件大小： | 79K |
| 代理商： | TEMT1000 |
TEMT1000
Vishay Telefunken
2 (5)
Rev. 4, 17-Feb-00
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81554
Basic Characteristics
T
amb
= 25 C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Test Conditions
I
C
= 1 mA
Symbol
V
(BR)CE
O
I
CEO
C
CEO
Min
70
Typ
Max
Unit
V
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E=0
1
3
200
nA
pF
deg
nm
nm
V
±
15
850
p
0.5
750...980
E
e
= 1 mW/cm
2
,
= 950 nm, I
C
= 0.1 mA
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
CEsat
0.3
t
on
2.0
s
Turn–Off Time
t
off
2.3
s
Cut–Off Frequency
f
c
180
kHz
Type Dedicated Characteristics
T
amb
= 25 C
Parameter
Collector Light Current E
e
=1mW/cm
2
,
Test Conditions
Type
Symbol
I
ca
Min
2.0
Typ
7.0
Max
Unit
mA
=950nm, V
CE
=5V
TEMT1000
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
94 8304
20
I
C
100
40
60
80
T
amb
– Ambient Temperature (
°
C )
10
0
10
1
10
2
10
3
10
4
V
CE
=20V
Figure 1. Collector Dark Current vs.
Ambient Temperature
94 8239
0
0.6
0.8
1.0
1.2
1.4
2.0
I
c
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
100
1.6
1.8
V
CE
=5V
E
e
=1mW/cm
2
=950nm
Figure 2. Relative Collector Current vs.
Ambient Temperature
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PDF描述 |
|---|---|
| TEMT1020 | Silicon Phototransistor |
| TEMT1030 | Silicon Phototransistor |
| TEMT1040 | Silicon Phototransistor |
| TEMT3700 | Silicon NPN Phototransistor |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TEMT1000 | 制造商:Vishay Semiconductors 功能描述:Photo Transistor |
| TEMT1000_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
| TEMT1000_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
| TEMT1020 | 功能描述:光电晶体管 NPN Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| TEMT1020 | 制造商:Vishay Semiconductors 功能描述:Optical Sensor (Photodetector - "NPN") P |
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