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参数资料
| 型号： | TFDT6500E |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | D116 - BACKSHELL ENVIRON EMI-RFI STRT MI |
| 中文描述： | 2.7 - 5.5V的快速红外收发器模块系列 |
| 文件页数： | 3/12页 |
| 文件大小： | 549K |
| 代理商： | TFDT6500E |
TFDU6100E/TFDS6500E/TFDT6500E
TELEFUNKEN
Semiconductors
Pending—Rev. A, 03-Apr-98
3
Pre-Release Information
Ordering Information
Part Number
Qty/ Reel
Description
TFDU6100E–TR3
1000 pcs
Oriented in carrier tape for side view surface mounting
TFDU6100E–TT3
1000 pcs
Oriented in carrier tape for top view surface mounting
TFDS6500E–TR3
750 pcs
TFDT6500E–TR3
750 pcs
Absolute Maximum Ratings
Parameter
Symbol
Test Conditions
a
Min
b
Typ
c
Max
b
Unit
Supply Voltage Range
V
CC
– 0.5
6
V
Supply Voltage Range (Anode)
V
anode
0
V
CC
+1.5
Input Currents
d
10
mA
Output Sinking Current
25
Power Dissipation
e
P
D
350
mW
Junction Temperature
T
J
125
Ambient Temperature Range (Operating)
T
amb
–25
85
°
C
Storage Temperature Range
T
stg
–25
85
Soldering Temperature
See Recommended Solder Profile
240
Average Output Current
I
IRED
(DC)
130
mA
Repetitive Pulsed Output Current
I
IRED
(RP)
<90
μ
s, t
on
<20%
600
IRED Anode Voltage at Current Output
V
IREDA
– 0.5
6
Transmitter Data Input Voltage
V
Txd
– 0.5
V
CC
+0.5
V
Receiver Data Output Voltage
V
Rxd
– 0.5
V
CC
+0.5
Virtual Source Size
f
d
2.5
2.8
mm
Maximum Intensity for Class 1 Operation
of IEC 825 or EN60825
g
EN60825, 1997
320
mW/sr
Notes
a.
b.
c.
d.
e.
f.
g.
Reference point GND pin unless otherwise noted.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Maximum input current for all pins (except IRED Anode pin).
See Derating Curve.
Method: (1-1/e) encircled energy.
Worst case IrDA SIR pulse pattern.
相关PDF资料 |
PDF描述 |
|---|---|
| TFDU6100E | 2.7-5.5V Fast Infrared Transceiver Module Family |
| TFDS6501E | Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDS6401 | Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDS6401-TR3 | Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDS6501E-TR4 | Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TFDT6501E | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDT6501E-TR4 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDT6502E | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDT6502E-TR3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDU2201 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Low Profile Transceiver Module PIN Photodiode and Infrared Emitter |
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