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参数资料
| 型号： | TFDT6500E |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | D116 - BACKSHELL ENVIRON EMI-RFI STRT MI |
| 中文描述： | 2.7 - 5.5V的快速红外收发器模块系列 |
| 文件页数： | 5/12页 |
| 文件大小： | 549K |
| 代理商： | TFDT6500E |
TFDU6100E/TFDS6500E/TFDT6500E
TELEFUNKEN
Semiconductors
Pending—Rev. A, 03-Apr-98
5
Pre-Release Information
Optoelectronic Characteristics
Parameter
Symbol
Test Conditions
a
Min
b
Typ
c
Max
b
Unit
Receiver
Minimum Detection Threshold Irradiance
E
e
9.6 kbit/s to 115.2 kbit/s
20
35
mW/m
2
Minimum Detection Threshold Irradiance
E
e
1.152 Mbit/s to 4 Mbit/s
50
80
Maximum Detection Threshold Irradiance
E
e
5
10
kW/m
2
Logic LOW Receiver Input Irradiance
E
e
4
mW/m
2
Rise Time of Output Signal
t
RR
10% to 90%, @2.2 k
, 15pF
90% to 10%, @2.2 k
, 15pF
10
40
ns
Fall Time of Output Signal
t
FR
10
40
Rx Pulse Width of Output Signal, 50%
P
w
Input pulse length 20
μ
s, 9.6 kbit/s
Input pulse length 1.41
μ
s, 115.2 kbit/s
mode
1.2
10
20
Rx Pulse Width of Output Signal, 50%
P
w
1.2
2.2
μ
s
Rx Pulse Width of Output Signal, 50%
P
w
Input pulse length 217 ns, 4.0 Mbit/s
mode
190
260
Rx Pulse Width of Output Signal, 50%
P
w
Input pulse length 125 ns, 4.0 Mbit/s
mode
90
165
ns
Rx Pulse Width of Output Signal, 50%
P
w
Input pulse length 250 ns, 4.0 Mbit/s
mode (double pulse)
210
290
Jitter, Leading Edge
Input Irradiance = 90 mW/m
2
,
4.0 Mbit/s mode
10
Latency
t
L
120
μ
s
Transmitter
IRED Operating Current
I
D
V
CC
= 5 V, R
1
= 5.6
0.48
0.55
A
Output Radiant Intensity
d
I
e
Txd = High, SD = Low,
R
1
= 5.6
120
140
280
mW/sr
Output Radiant Intensity Half Angle
α
±
24
Output Radiant Intensity
d
I
e
λ
P
Txd = Low or SD = High
e
, R
L
=5.6
.04
mW/sr
Peak Wavelength
880
900
nm
Voltage drop at output driver
I
F
= 600 mA, pulse length 2
μ
s, duty
cycle 25%
400
800
mV
Rise Time, Fall Time
t
R
, t
F
10
40
ns
Optical Overshoot
25
%
Notes
a.
b.
c.
d.
e.
T
amb
= 25 C, V
CC
= 2.7 – 5.5 V unless otherwise noted.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
VCC = 5 V, = 0 , 15
Receiver is inactive as long as SD = High
相关PDF资料 |
PDF描述 |
|---|---|
| TFDU6100E | 2.7-5.5V Fast Infrared Transceiver Module Family |
| TFDS6501E | Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDS6401 | Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDS6401-TR3 | Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDS6501E-TR4 | Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TFDT6501E | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDT6501E-TR4 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDT6502E | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDT6502E-TR3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDU2201 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Low Profile Transceiver Module PIN Photodiode and Infrared Emitter |
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