参数资料
型号: TFDU6101E-TR3
厂商: VISHAY TELEFUNKEN
元件分类: 摇控器
英文描述: TRANSMITTER/RECEIVER IC, SMA8
封装: 9.70 X 4 MM, 4.70 MM HEIGHT, SMT-8
文件页数: 11/16页
文件大小: 260K
代理商: TFDU6101E-TR3
TFDU6102E/TFDS6502E/TFDT6502E
Vishay Telefunken
TFDU6101E/TFDS6501E/TFDT6501E
Rev. B1.2, 07.04.99
4
www.vishay.de
FaxBack +1-408-970-5600
Document Number 82519
Absolute Maximum Ratings
Reference point Pin: GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage Range,
Transceiver
0 V <VCC2 <6 V
VCC1
– 0.5
6
V
Supply Voltage Range,
Transmitter
0 V <VCC1 <6 V
VCC2
– 0.5
6
V
Input Currents
For all Pins, Except IRED
Anode Pin
10
mA
Output Sinking Current
25
mA
Power Dissipation
See Derating Curve
PD
350
mW
Junction Temperature
TJ
125
°C
Ambient Temperature
Range (Operating)
Tamb
–25
+85
°C
Storage Temperature
Range
Tstg
–25
+85
°C
Soldering Temperature
See Recommended Solder
Profile (see Figure 9)
240
°C
Average Output Current
IIRED (DC)
130
mA
Repetitive Pulsed Output
Current
<90
s, ton <20%
IIRED (RP)
600
mA
IRED Anode Voltage
VIREDA
– 0.5
6
V
Transmitter Data Input
Voltage
VTxd
– 0.5
VCC1 +0.5
V
Receiver Data Output
Voltage
VRxd
– 0.5
VCC1 +0.5
V
Virtual Source Size
Method:
(1–1/e) encircled energy
d
2.5
2.8
mm
Maximum Intensity for
Class 1 Operation of
IEC825–1 or EN60825–1
(worst case IrDA FIR
pulse pattern)
EN60825, 1997,
unidirectional operation,
worst case test mode
320
mW/sr
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