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参数资料
| 型号： | THMC40DR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 运动控制电子 |
| 英文描述： | BRUSHLESS DC MOTOR CONTROLLER, 1.5 A, PDSO14 |
| 封装： | PLASTIC, SOP-14 |
| 文件页数： | 14/19页 |
| 文件大小： | 300K |
| 代理商： | THMC40DR |
THMC40, THMC41
VARIABLE SPEED 12-VDC BRUSHLESS FAN MOTOR DRIVERS
SLIS097 – MARCH 2000
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
dc
electrical characteristics, VPWR = 12 V, TA = – 30°C to 80°C (unless otherwise noted)
supply current
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VPWR
Supply voltage range
11
12
13
V
IVPWR
VPWR supply current
Idle condition in locked rotor detect
2.5
5
mA
IVPWR
VPWR supply current
ILOAD = –1 A, VOUT low, TA = 25°C
5
mA
ISLEEP
Sleep-state current
VPWM ≤ 0.4 V
300
400
A
PHA, PHB low-side phase winding driver outputs
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ILEAK
PHA,PHB output leakage current
Output = OFF, VPHx = 12 V
0.1
10
A
VOL
PHA, PHB low-level output voltage
Output = ON,
IPHx = 1 A, TA = 25°C
0.5
0.6
V
RDS(ON)
PHA, PHB output ON resistance
Output = ON,
IPHx = 1A, TA = 25°C
0.5
0.6
VCLAMP
PHA, PHB output active clamp voltage
Output = OFF, IPHx = 200 mA
32
38
V
Hall sensor signal conditioning
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IIB(HL)
Hall input bias current
±0.1
±1
A
VICR(HL)
ICR(HL) common-mode input voltage range
1
3.5
V
VIO
Hall comparator input offset voltage
Over VICR(HL) = 1 V to 3.5 V
–7
0
7
mV
VOUT high-side phase winding driver output
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ILEAK
VOUT output sleep-state leakage current
Sleep state engaged,
VVOUT = 0 V to VPWR
±0.1
±10
A
VOH
VOUT high-level output voltage
Run state, Output high
IVOUT = –1 A, TA = 25°C
VPWR
– 0.4
VPWR
– 0.6
V
RDS(ON)
VOUT output high-side resistance to VPWR
VOUT
, A
0.4
0.6
VRECIR
VOUT output recirculation voltage
Run state, Output low
– 0.3
– 0.5
V
RDS(ON)(SYNC)
VOUT synchronous switch resistance to PGND
,
IVOUT = –1 A, TA = 25°C
0.3
0.5
ILIMIT
Pulsed VOUT synchronous rectification current
limit
Run state, VOUT=VPWR=12V,
VCOSC > VPWM,
tPULSE = 100 s, See Note 5
2
2.6
A
CP high-side gate drive charge pump capacitor input
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCP
Charge pump voltage
IVCP = –60 A, VPWM = 2.5 V
22
26
V
VCP(UVLO)
VCP undervoltage lock-out
6.5
7.6
8.5
V
COSC external oscillator capacitor
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICHARGE
COSC charge source current
VCOSC = 1.4 V, Charge mode
–130
–180
–230
A
IDISCHARGE
COSC discharge sink current
VCOSC = 1.4 V, Discharge mode
130
180
230
A
VDISCHARGE COSC upper threshold for switching to current sink
2
2.3
2.6
V
VCHARGE
COSC lower threshold for switching to current
source
0.43
0.5
0.57
V
NOTE 5: VOUT current limit, in conjunction with thermal shutdown function, provides device survivability under VOUT-to-VPWR short condition.
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