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| 型号： | THS3092DDAG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封装： | GREEN, PLASTIC, SOP-8 |
| 文件页数： | 11/37页 |
| 文件大小： | 1775K |
| 代理商： | THS3092DDAG4 |
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0
5
10
15
20
25
30
35
40
45
10
100
CL Capacitive Load pF
Recommended
R
ISO
Gain = 5,
VS = ±15 V
+
178
715
RISO
CL
_
+
VS
49.9
715
5.11
1
F
178
VS
100
LOAD
RISO
_
+
VS
49.9
5.11
1
F
178
VS
27 pF
715
RF
RG
715
100
LOAD
RIN
_
+
VS
49.9
715
Ferrite Bead
1
F
178
VS
100
LOAD
_
+
VS
49.9
5.11
1
F
178
VS
27 pF
715
RF
RG
100
LOAD
FIN
FB
SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006
Figure 61 shows another method used to maintain
the low frequency load independence of the amplifier
while isolating the phase shift caused by the
capacitance at high frequency. At low frequency,
feedback is mainly from the load side of RISO. At high
frequency, the feedback is mainly via the 27-pF
capacitor. The resistor RIN in series with the negative
input is used to stabilize the amplifier and should be
equal to the recommended value of RF at unity gain.
Replacing RIN with a ferrite of similar impedance at
about 100 MHz as shown in Figure 62 gives similar
results with reduced dc offset and low frequency
noise.
(See
the
ADDITIONAL
REFERENCE
MATERIAL section for Expanding the usability of
current-feedback amplifiers.)
Figure 58. Recommended RISO vs Capacitive Load
Figure 59.
Figure 61.
Figure 60.
Placing a small series resistor, RISO, between the
amplifier’s output and the capacitive load, as shown
Figure 62.
in Figure 59, is an easy way of isolating the load
capacitance.
Figure 63 is shown using two amplifiers in parallel to
double the output drive current to larger capacitive
Using a ferrite chip in place of RISO, as shown in
loads. This technique is used when more output
Figure 60, is another approach of isolating the output
current is needed to charge and discharge the load
of the amplifier. The ferrite's impedance characteristic
faster like when driving large FET transistors.
versus frequency is useful to maintain the low
frequency load independence of the amplifier while
isolating the phase shift caused by the capacitance at
high frequency. Use a ferrite with similar impedance
to RISO, 20 - 50 , at 100 MHz and low impedance
at dc.
19
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相关代理商/技术参数 |
参数描述 |
|---|---|
| THS3092DDAR | 功能描述:高速运算放大器 Dual Hig-Vltg Low Distortion RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS3092DDARG3 | 功能描述:高速运算放大器 Dual Hig-Vltg Low Distortion RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS3092DG4 | 功能描述:高速运算放大器 Dual Hig-Vltg Low Distortion RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS3092DR | 功能描述:高速运算放大器 Dual Hig-Vltg Low Distortion RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS3092DRG4 | 功能描述:高速运算放大器 Dual Hig-Vltg Low Distortion RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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