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参数资料
| 型号： | THS4275DGNRG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封装： | POWERPAD, PLASTIC, MSOP-8 |
| 文件页数： | 12/49页 |
| 文件大小： | 1515K |
| 代理商： | THS4275DGNRG4 |
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SLOS397F – JULY 2002 – REVISED OCTOBER 2009
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGING/ORDERING INFORMATION(1)
ORDERABLE PACKAGE AND NUMBER
LEADLESS
PLASTIC MSOP (2)
MSOP 8 (3)
PowerPAD
PLASTIC
SMALL OUTLINE (D) (2)
PACKAGE
(DRB)
(DGN)
PACKAGE MARKING
(DGK)
MARKING
THS4271D
THS4271DRBT
THS4271DGN
THS4271DGK
BFQ
BEY
THS4271DR
THS4271DRBR
THS4271DGNR
THS4271DGKR
THS4275D
THS4275DRBT
THS4275DGN
THS4275DGK
BFR
BJD
THS4275DR
THS4275DRBR
THS4275DGNR
THS4275DGKR
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2)
All packages are available taped and reeled. The R suffix standard quantity is 2500 (for example, THS4271DGNR).
(3)
All packages are available taped and reeled. The R suffix standard quantity is 3000. The T suffix standard quantity is 250 (for example,
THS4271DRBT).
ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature range unless otherwise noted
(1)
UNIT
VS
Supply voltage
16.5 V
VI
Input voltage
±VS
IO
(2)
Output current
100 mA
Continuous power dissipation
See Dissipation Ratings Table
TJ
Maximum junction temperature
+150°C
TJ
(2)
Maximum junction temperature, continuous operation long term reliability
+125°C
TJ
(3)
Maximum junction temperature to prevent oscillation
+60°C
Tstg
Storage temperature range
–65°C to +150°C
HBM
3000 V
ESD ratings
CDM
1500 V
MM
1000 V
(1)
The absolute maximum temperature under any condition is limited by the constraints of the silicon process. Stresses above these
ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not
implied.
(2)
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
(3)
See Maximum Die Temperature to Prevent Oscillation section in the Application Information of this data sheet.
PACKAGE DISSIPATION RATINGS
θJC
θJA
(1)
PACKAGE
(°C/W)
D (8 pin)
38.3
97.5
DGN (8 pin)(2)
4.7
58.4
DGK (8 pin)
54.2
260
DRB (8 pin)(2)
5
45.8
(1)
These data were taken using the JEDEC standard High-K test PCB.
(2)
The THS4271/5 may incorporate a PowerPAD on the underside of the chip. This feature acts as a
heat sink and must be connected to a thermally dissipative plane for proper power dissipation. Failure
to do so may result in exceeding the maximum junction temperature which could permanently damage
PowerPAD thermally enhanced package.
2
Copyright 2002–2009, Texas Instruments Incorporated
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| THS4275DRG4 | 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8 |
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| THS4275MDGNREPR | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| THS4275DR | 功能描述:高速运算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4275DRBR | 功能描述:高速运算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4275DRBRG4 | 功能描述:高速运算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4275DRBT | 功能描述:高速运算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4275DRBTG4 | 功能描述:高速运算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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