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参数资料
| 型号： | THS4275DGNRG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封装： | POWERPAD, PLASTIC, MSOP-8 |
| 文件页数： | 14/49页 |
| 文件大小： | 1515K |
| 代理商： | THS4275DGNRG4 |
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_
+
THS4271
Rg
249
RT
130
100 pF
0.1
F
6.8
F
VS
5 V
50
Source
+
VI
100 pF
0.1
F
6.8
F
+
+VS
5 V
VO
CT
0.1
F
Rf
249
RM
61.9
499
www.ti.com
SLOS397F – JULY 2002 – REVISED OCTOBER 2009
WIDEBAND, INVERTING GAIN OPERATION
must be taken when dealing with low inverting gains,
as the resulting feedback resistor value can present a
Since
the
THS4271
and
THS4275
are
significant load to the amplifier output. For an
general-purpose,
wideband
voltage-feedback
inverting gain of 2, setting Rg to 49.9 for input
amplifiers,
several
familiar
operational
amplifier
matching eliminates the need for RM but requires a
applications circuits are available to the designer.
100-
feedback resistor. This has an advantage of
Figure 76 shows a typical inverting configuration
the noise gain becoming equal to 2 for a 50-
source
where the input and output impedances and noise
impedance—the same as the noninverting circuit in
gain from Figure 75 are retained in an inverting circuit
Figure 75. However, the amplifier output now sees
configuration. Inverting operation is one of the more
the 100-
feedback resistor in parallel with the
common
requirements
and
offers
several
external load. To eliminate this excessive loading, it is
performance benefits. The inverting configuration
preferable to increase both Rg and Rf, values, as
shows improved slew rates and distortion due to the
shown in Figure 76, and then achieve the input
pseudo-static voltage maintained on the inverting
matching impedance with a third resistor (RM) to
input.
ground. The total input impedance becomes the
parallel combination of Rg and RM.
The next major consideration is that the signal source
impedance becomes part of the noise gain equation
and hence influences the bandwidth. For example,
the RM value combines in parallel with the external
50-
source
impedance
(at
high
frequencies),
yielding an effective source impedance of 50
||
61.9
= 27.7 . This impedance is then added in
series with Rg for calculating the noise gain. The
result is 1.9 for Figure 76, as opposed to the 1.8 if RM
is eliminated. The bandwidth is lower for the gain of
–2 circuit, Figure 76 (NG=+1.9), than for the gain of
+2 circuit in Figure 75.
The last major consideration in inverting amplifier
design is setting the bias current cancellation resistor
on the noninverting input. If the resistance is set
equal to the total dc resistance looking out of the
Figure 76. Wideband, Inverting Gain
inverting terminal, the output dc error, due to the input
Configuration
bias currents, is reduced to (input offset current)
impedance looking out of the inverting terminal is 249
In the inverting configuration, some key design
|| (249 + 27.7 ) = 130 . To reduce the
considerations must be noted. One is that the gain
additional high-frequency noise introduced by the
resistor (Rg) becomes part of the signal channel input
resistor at the noninverting input, and power-supply
impedance. If the input impedance matching is
feedback, RT is bypassed with a capacitor to ground.
desired (which is beneficial whenever the signal is
coupled through a cable, twisted pair, long PCB
trace, or other transmission line conductors), Rg may
be set equal to the required termination value and Rf
adjusted to give the desired gain. However, care
Copyright 2002–2009, Texas Instruments Incorporated
21
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相关代理商/技术参数 |
参数描述 |
|---|---|
| THS4275DR | 功能描述:高速运算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4275DRBR | 功能描述:高速运算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4275DRBRG4 | 功能描述:高速运算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4275DRBT | 功能描述:高速运算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4275DRBTG4 | 功能描述:高速运算放大器 Super-Fast Ultra-Low Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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