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参数资料
| 型号： | THS4275MDEPR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| 封装： | PLASTIC, SO-8 |
| 文件页数： | 12/36页 |
| 文件大小： | 598K |
| 代理商： | THS4275MDEPR |
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THS4271EP
THS4275EP
SGLS270A DECEMBER 2004 REVISED APRIL 2005
www.ti.com
2
_
+
249
+5 V
49.9
VI
5 V
50
Source
Low-Noise, Low-Distortion, Wideband Application Circuit
NOTE: Power supply decoupling capacitors not shown
VO
249
50
THS4271
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
UNIT
Supply voltage, VS
16.5 V
Input voltage, VI
±VS
Output current, IO
100 mA
Continuous power dissipation
See the Dissipation Rating Table
Maximum junction temperature, TJ
150
°C
Maximum junction temperature, continuous
operation, long term reliability TJ (2)
125
°C
Storage temperature range, Tstg
65
°C to 150°C
Lead temperature
1,6 mm (1/16 inch) from case for 10 seconds
300
°C
HBM
3000 V
ESD ratings:
CDM
1000 V
ESD ratings:
MM
100 V
(1) The absolute maximum temperature under any condition is
limited by the constraints of the silicon process. Stresses above
these ratings may cause permanent damage. Exposure to
absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only and functional
operation of the device at these or any other conditions beyond
those specified is not implied.
(2) Long-term high-temperature storage and/or extended use at
maximum recommended operating conditions may result in a
reduction of overall device life. See Figure 1 for additional
information on thermal derating.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE DISSIPATION RATINGS
PACKAGE
θJC
θJA(1)
PACKAGE
θJC
(
°C/W)
θJA(1)
(
°C/W)
D (8 pin)
38.3
97.5
DGN (8 pin)(2)
4.7
58.4
(1) This data was taken using the JEDEC standard High-K test PCB.
(2) The THS4271/5 may incorporate a PowerPAD
on the
underside of the chip. This acts as a heat sink and must be
connected to a thermally dissipative plane for proper power
dissipation. Failure to do so may result in exceeding the
maximum junction temperature which could permanently
damage the device. See Texas Instruments technical briefs
SLMA002 and SLMA004 for more information about utilizing the
PowerPAD thermally enhanced package.
相关PDF资料 |
PDF描述 |
|---|---|
| THS4275MDREPR | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4281DG4 | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
| THS4281DBVR | 1 CHANNEL, VIDEO AMPLIFIER, PDSO5 |
| THS4281DBVT | 1 CHANNEL, VIDEO AMPLIFIER, PDSO5 |
| THS4281DGKR | 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| THS4281 | 制造商:TI 制造商全称:Texas Instruments 功能描述:VERY LOW-POWER, HIGH-SPEED, RAIL-TO-RAIL INPUT AND OUTPUT VOLTAGE-FEEDBACK OPERATIONAL AMPLIFIER |
| THS4281D | 功能描述:高速运算放大器 Very Lo-Pwr R-To-R I/O Voltage Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4281DBVR | 功能描述:高速运算放大器 Very Lo-Pwr R-To-R I/O Voltage Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4281DBVRG4 | 功能描述:高速运算放大器 Very Lo-Pwr R-To-R I/O Voltage Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4281DBVT | 功能描述:高速运算放大器 Very Lo-Pwr R-To-R I/O Voltage Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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