参数资料
型号: TIP100
厂商: 意法半导体
英文描述: Complementary Silicon Power Darlington Transistors(互补硅功率达林顿晶体管)
中文描述: 互补硅功率达林顿晶体管(互补硅功率达林顿晶体管)
文件页数: 1/4页
文件大小: 44K
代理商: TIP100
TIP100/TIP102
TIP105/TIP106/TIP107
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
I
SGS-THOMSON PREFERRED SALESTYPES
I
COMPLEMENTARYPNP - NPN DEVICES
I
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
I
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The TIP100 and TIP102 are silicon epitaxial-base
NPN power transistors in monolithic Darlington
configuration
mounted
package, intented for use in power linear and
switching applications.
The complementary PNP types are TIP105 and
TIP107 respectively.
Also TIP106 is a PNP type.
in
TO-220
plastic
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
PNP
TIP100
TIP105
60
60
TIP102
TIP107
100
100
TIP106
80
80
5
8
15
1
80
2
-65 to 150
150
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
case
25
o
C
V
V
V
A
A
A
W
W
o
C
o
C
T
amb
25
o
C
T
stg
T
j
Storage Temperature
Max. Operating Junction Temperature
* For PNP types voltage and current values are negative.
1
2
3
TO-220
R
1
Typ. = 5 K
R
2
Typ. =150
1/4
相关PDF资料
PDF描述
TIP105 Complementary Silicon Power Darlington Transistors(互补硅功率达林顿晶体管)
TIP106 Complementary Silicon Power Darlington Transistors(互补硅功率达林顿晶体管)
TIP131 Complemetary Silicon Power Darlington Transistors(互补硅功率达林顿晶体管)
TIP137 Complemetary Silicon Power Darlington Transistors(互补硅功率达林顿晶体管)
TIP33C Complemetary Silicon Power Transistors(互补硅功率晶体管)
相关代理商/技术参数
参数描述
TIP100_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Medium−Power Complementary Silicon Transistors
TIP100_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Darlington Transistor
TIP100_11 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Plastic Medium-Power Silicon Transistors
TIP100-BP 功能描述:两极晶体管 - BJT NPN 60V 8A 80W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
TIP100G 功能描述:达林顿晶体管 8A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel