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| 型号： | TIP117F |
| 厂商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| 中文描述： | 外延平面PNP晶体管（单片施工技术基础之上的发射极分流器工业用途。） |
| 文件页数： | 1/2页 |
| 文件大小： | 42K |
| 代理商： | TIP117F |
2002. 6. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP117F
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: hFE=1000(Min.),
VCE=-4V, IC=-1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP112F.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
Φ3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
DC
IC
-2
A
Pulse
ICP
-4
Base Current
DC
IB
-50
mA
Collector Power
Dissipation
Ta=25
PC
2
W
Tc=25
20
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-65
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICEO
VCE=-50V, IB=0
-
-2
mA
ICBO
VCB=-100V, IE=0
-
-1
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-2
mA
DC Current Gain
hFE
VCE=-4V, IC=-1A
1000
-
VCE=-4V, IC=-2A
500
-
Collector-Emitter Sustaining Voltage
VCEO(SUS)
IC=-30mA, IB=0
-100
-
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-2A, IB=-8mA
-
-2.5
V
Base-Emitter On Voltage
VBE(ON)
VCE=-4V, IC=-2A
-
-2.8
V
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=0.1MHz
-
200
pF
C
B
E
R
10k
0.6k
R
1
2
=
EQUIVALENT CIRCUIT
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相关代理商/技术参数 |
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|---|---|
| TIP117F_07 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| TIP117G | 功能描述:达林顿晶体管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| TIP117HAR90 | 制造商:HAR 功能描述:TIP117 |
| TIP117-S | 制造商:Bourns / JW Miller 功能描述:Trans Darlington PNP 100V 4A 3-Pin(3+Tab) TO-220 制造商:Bourns Inc 功能描述:TRANS DARLINGTON PNP 100V 4A 3PIN TO-220 - Rail/Tube |
| TIP117TU | 功能描述:达林顿晶体管 PNP Epitaxial Sil Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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