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参数资料
| 型号： | TIP30A |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Complementary Silicon Plastic Power Transistors(互补型硅塑料功率晶体管) |
| 中文描述： | 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 67K |
| 代理商： | TIP30A |
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
http://onsemi.com
5
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
MIN
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
0.080
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
2.04
MILLIMETERS
INCHES
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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Phone
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TIP29B/D
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PDF描述 |
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| TIP29A | Complementary Silicon Plastic Power Transistors(互补型硅塑料功率晶体管) |
| TIP29B | Complementary Silicon Plastic Power Transistors(互补型硅塑料功率晶体管) |
| TIP30B | Complementary Silicon Plastic Power Transistors(互补型硅塑料功率晶体管) |
| TIP30C | Complementary Silicon Plastic Power Transistors(互补型硅塑料功率晶体管) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TIP30A | 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-220 |
| TIP30A-BP | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:1.0 Amp Complementary Silicon Power Transistors |
| TIP30AG | 功能描述:两极晶体管 - BJT 1A 60V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| TIP30A-S | 功能描述:两极晶体管 - BJT 60V 1A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| TIP30ATU | 功能描述:两极晶体管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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