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参数资料
| 型号： | TIP31B |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Complementary Silicon Plastic Power Transistors(互补型，塑料功率晶体管) |
| 中文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 81K |
| 代理商： | TIP31B |
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
http://onsemi.com
4
t, TIME (ms)
1.0
0.7
0.01
0.01
0.1
0.07
r
1.0
1.0
100
Z
JC(t)
= r(t) R
JC
R
JC
(t) = 3.125
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
Z
JC(t)
P
(pk)
t
1
t
2
SINGLE PULSE
1.0 k
D = 0.5
0.05
DUTY CYCLE, D = t
1
/t
2
Figure 4. Thermal Response
0.1
0.05
0.03
0.02
0.5
0.3
0.2
0.02
0.05
0.2
0.5
2.0
5.0
200
500
10
20
50
0.2
0.02
0.01
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
20
5.0
50
100
Figure 5. Active Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN
LIMITED @ T
J
≤
150
°
C
THERMAL LIMIT @ T
C
= 25
°
C
(SINGLE PULSE)
BONDING WIRE LIMIT
1.0ms
100 s
2.0
1.0
10
5.0
I
5.0ms
CURVES APPLY
BELOW RATED V
CEO
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05
0.1
0.2
0.7
0.03
0.3
0.5
0.07
I
C
, COLLECTOR CURRENT (AMP)
Figure 6. TurnOff Time
3.0
2.0
t
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
1.0
2.0
3.0
0.2
0.5
1.0
5.0
0.1
2.0 3.0
0.3
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
C
200
100
70
50
30
10
20
40
30
t
f
@ V
CC
= 30 V
t
f
@ V
CC
= 10 V
t
s
′
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′
= t
s
1/8 t
f
T
J
= 25
°
C
T
J
= +25
°
C
C
eb
C
cb
相关PDF资料 |
PDF描述 |
|---|---|
| TIP32C | Complementary Silicon Plastic Power Transistors(互补型，塑料功率晶体管) |
| TIP33 | NPN SILICON POWER TRANSISTORS |
| TIP33A | NPN SILICON POWER TRANSISTORS |
| TIP33B | NPN SILICON POWER TRANSISTORS |
| TIP33C | CONN, D, 37POS, MTL, SHL, EMI, JUNCTION, (890183) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TIP31-B | 功能描述:两极晶体管 - BJT 3.0A 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| TIP31B HAR91 | 制造商:HAR 功能描述:TIP31B |
| TIP31B-BP | 功能描述:两极晶体管 - BJT 3A 80V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| TIP31BG | 功能描述:两极晶体管 - BJT 3A 80V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| TIP31BHAR91 | 制造商:HAR 功能描述:TIP31B |
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