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参数资料
| 型号： | TIP35C |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Complementary Silicon High(互补型硅高功率晶体管) |
| 中文描述： | 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 封装： | CASE 340D-02, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 80K |
| 代理商： | TIP35C |
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 5
1
Publication Order Number:
TIP35A/D
TIP35A, TIP35B, TIP35C
(NPN); TIP36A, TIP36B,
TIP36C (PNP)
TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices
Complementary Silicon
HighPower Transistors
Designed for generalpurpose power amplifier and switching
applications.
Features
25 A Collector Current
Low Leakage Current
I
CEO
= 1.0 mA @ 30 and 60 V
Excellent DC Gain
h
FE
= 40 Typ @ 15 A
High Current Gain Bandwidth Product
h
fe
= 3.0 min @ I
C
= 1.0 A, f = 1.0 MHz
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
TIP35A
TIP36A
TIP35B
TIP36B
TIP35C
TIP36C
Unit
Collector Emitter Voltage
V
CEO
V
CB
V
EB
I
C
60
80
100
Vdc
Collector Base Voltage
60
80
100
Vdc
Emitter Base Voltage
5.0
Vdc
Collector Current
Continuous
Peak (Note 1)
25
40
Adc
Base Current Continuous
I
B
P
D
5.0
Adc
Total Power Dissipation
@ T
C
= 25 C
Derate above 25 C
125
W
W/ C
Operating and Storage
Junction Temperature Range
T
J
, T
stg
65 to +150
C
Unclamped Inductive Load
E
SB
90
mJ
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoCase
R
JC
1.0
°
C/W
JunctionToFreeAir
Thermal Resistance
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle
R
JA
35.7
°
C/W
10%.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
25 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60100 VOLTS, 125 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
SOT93 (TO218)
CASE 340D
STYLE 1
MARKING DIAGRAM
A
Y
WW
TIP3xx
xx
= Assembly Location
= Year
= Work Week
= Device Code
= 5A, 5B, 5C
6A, 6B, 6C
= PbFree Package
G
AYWWG
TIP3xx
相关PDF资料 |
PDF描述 |
|---|---|
| TIP36A | Complementary Silicon High(互补型硅高功率晶体管) |
| TIP36C | PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
| TIP3055 | NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
| TIP41B | Complementary Silicon Plastic Power Transistors(互补型，塑料功率晶体管) |
| TIP41C | Complementary Silicon Plastic Power Transistors(互补型，塑料功率晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TIP35C | 制造商:Bourns Inc 功能描述:TRANSISTOR NPN SOT-93 |
| TIP35C_01 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| TIP35C_08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Complementary power transistors |
| TIP35CA | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| TIP35CG | 功能描述:两极晶体管 - BJT 25A 100V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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