参数资料
型号: TIP35C
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: Complementary Silicon High(互补型硅高功率晶体管)
中文描述: 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218
封装: CASE 340D-02, 3 PIN
文件页数: 2/6页
文件大小: 80K
代理商: TIP35C
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
2
ORDERING INFORMATION
Device
Package
Shipping
TIP35A
SOT93 (TO218)
30 Units / Rail
TIP35AG
SOT93 (TO218)
(PbFree)
30 Units / Rail
TIP35B
SOT93 (TO218)
30 Units / Rail
TIP35BG
SOT93 (TO218)
(PbFree)
30 Units / Rail
TIP35C
SOT93 (TO218)
30 Units / Rail
TIP35CG
SOT93 (TO218)
(PbFree)
30 Units / Rail
TIP36A
SOT93 (TO218)
30 Units / Rail
TIP36AG
SOT93 (TO218)
(PbFree)
30 Units / Rail
TIP36B
SOT93 (TO218)
30 Units / Rail
TIP36BG
SOT93 (TO218)
(PbFree)
30 Units / Rail
TIP36C
SOT93 (TO218)
30 Units / Rail
TIP36CG
SOT93 (TO218)
(PbFree)
30 Units / Rail
DYNAMIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
C
= 25 C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)
TIP35B, TIP36B
TIP35C, TIP36C
V
100
Vdc
CE
B
CollectorEmitter Cutoff Current
I
mA
(V
CE
= Rated V
CEO
, V
EB
= 0)
EmitterBase Cutoff Current
EB
C
ON CHARACTERISTICS
(Note 2)
(I
C
= 15 A, V
CE
= 4.0 V)
FE
15
75
CollectorEmitter Saturation Voltage
C
B
1.8
(I
C
= 25 A, V
CE
= 4.0 V)
4.0
SmallSignal Current Gain
C
CE
h
25
T
相关PDF资料
PDF描述
TIP36A Complementary Silicon High(互补型硅高功率晶体管)
TIP36C PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
TIP3055 NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
TIP41B Complementary Silicon Plastic Power Transistors(互补型,塑料功率晶体管)
TIP41C Complementary Silicon Plastic Power Transistors(互补型,塑料功率晶体管)
相关代理商/技术参数
参数描述
TIP35C 制造商:Bourns Inc 功能描述:TRANSISTOR NPN SOT-93
TIP35C_01 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR
TIP35C_08 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Complementary power transistors
TIP35CA 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR
TIP35CG 功能描述:两极晶体管 - BJT 25A 100V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2