参数资料
型号: TISP1072F3DR
厂商: Bourns Inc.
文件页数: 1/12页
文件大小: 0K
描述: SURGE SUPP -58V UNIDIR 8-SOIC
标准包装: 2,500
电压 - 击穿: 72V
电压 - 断路: 58V
电压 - 导通状态: 3V
电流 - 峰值脉冲(8 x 20µs): 70A
电流 - 峰值脉冲(10 x 1000µs): 35A
电流 - 保持 (Ih): 150mA
元件数: 2
电容: 0.08pF
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
TISP1072F3,TISP1082F3
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL
THYRISTOR OVERVOLTAGE PROTECTORS
TISP1xxxF3 Overvoltage Protector Series
Ion-Implanted Breakdown Region
D Package (Top View)
Precise and Stable Voltage
Low Voltage Overshoot under Surge
T
1
8
G
DEVICE
‘1072F3
‘1082F3
V DRM
V
- 58
- 66
V (BO)
V
- 72
- 82
NC
NC
R
2
3
4
7
6
5
G
G
G
NC - No internal connection
Planar Passivated Junctions
Low Off-State Current <10 A
Rated for International Surge Wave Shapes
I TSP
Waveshape Standard
A
2/10 μ s
GR-1089-CORE
80
8/20 μ s
IEC 61000-4-5
70
10/160 μ s
FCC Part 68
60
ITU-T K.20/21
50
10/700 μ s
FCC Part 68
Device Symbol
T
R
10/560 μ s
10/1000 μ s
FCC Part 68
GR-1089-CORE
45
35
G
SD1XAA
Terminals T, R and G correspond to the
.......................................UL Recognized Component
Description
These dual forward-conducting unidirectional over-voltage
protectors are designed for the overvoltage protection of
ICs used for the SLIC (Subscriber Line Interface Circuit)
function. The IC line driver section is typically powered with
0 V and a negative supply. The TISP1xxxF3 limits voltages
that exceed these supply rails and is offered in two voltage
variants to match typical negative supply voltage values.
High voltages can occur on the line as a result of exposure
to lightning strikes and a.c. power surges. Negative tran-
sients are initially limited by breakdown clamping until the
voltage rises to the breakover level, which causes the
device to crowbar. The high crowbar holding current pre-
vents d.c. latchup as the current subsides. Positive tran-
sients are limited by diode forward conduction. These pro-
tectors are guaranteed to suppress and withstand the listed
international lightning surges on any terminal pair.
How To Order
alternative line designators of A, B and C
Device
Package
Carrier
Order As
TISP1xxxF3 D, Small-outline Tape And Reeled TISP1xxxF3DR-S
Insert xxx value corresponding to protection voltages of 072 and 082
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数
参数描述
TISP1072F3DR-S 功能描述:硅对称二端开关元件 Protector Fixed Voltage RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP1072F3DS 制造商:Bourns Inc 功能描述:
TISP1072F3D-S 功能描述:硅对称二端开关元件 Overvoltage protector RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP1072F3P 功能描述:硅对称二端开关元件 Overvoltage protector RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP1072F3PS 制造商:Bourns Inc 功能描述: