参数资料
型号: TISP1072F3DR
厂商: Bourns Inc.
文件页数: 11/12页
文件大小: 0K
描述: SURGE SUPP -58V UNIDIR 8-SOIC
标准包装: 2,500
电压 - 击穿: 72V
电压 - 断路: 58V
电压 - 导通状态: 3V
电流 - 峰值脉冲(8 x 20µs): 70A
电流 - 峰值脉冲(10 x 1000µs): 35A
电流 - 保持 (Ih): 150mA
元件数: 2
电容: 0.08pF
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
TISP1xxxF3 Overvoltage Protector Series
APPLICATIONS INFORMATION
Protection Voltage
The protection voltage, (V (BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on
the rate of current rise, di/dt, when the TISP ¤ device is clamping the voltage in its breakdown region. The V (BO) value under surge condi-
tions can be estimated by multiplying the 50 Hz rate V (BO) (250 V/ms) value by the normalized increase at the surge’s di/dt (Figure 8.). An
estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T K.21 1.5 kV, 10/700 μs surge has an average dv/dt of 150 V/μs, but, as the rise is exponential, the initial dv/dt
is higher, being in the region of 450 V/μs. The instantaneous generator output resistance is 25 ? . If the equipment has an additional
series resistance of 20 ? , the total series resistance becomes 45 ? . The maximum di/dt then can be estimated as 450/45 = 10 A/μs. In
practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the
TISP ¤ device breakdown region.
Capacitance
Off-state Capacitance
The off-state capacitance of a TISP ¤ device is sensitive to junction temperature, T J , and the bias voltage, comprising of the d.c. volt-
age, V D , and the a.c. voltage, V d . All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical
25 °C variation of capacitance value with a.c. bias is shown in Figure 21. When V D >> V d , the capacitance value is independent on the
value of V d . The capacitance is essentially constant over the range of normal telecommunication frequencies.
NORMALIZED CAPACITANCE
vs
1.05
1.00
0.95
0.90
0.85
0.80
0.75
RMS AC TEST VOLTAGE
Normalized to V d = 100 mV
AIXXAA
DC Bias, V D = 0
0.70
1
10
100
1000
V d - RMS AC Test Voltage - mV
Figure 20.
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数
参数描述
TISP1072F3DR-S 功能描述:硅对称二端开关元件 Protector Fixed Voltage RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP1072F3DS 制造商:Bourns Inc 功能描述:
TISP1072F3D-S 功能描述:硅对称二端开关元件 Overvoltage protector RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP1072F3P 功能描述:硅对称二端开关元件 Overvoltage protector RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP1072F3PS 制造商:Bourns Inc 功能描述: