参数资料
型号: TISP3135H3SL
厂商: Bourns Inc.
文件页数: 3/11页
文件大小: 0K
描述: SURGE SUPP 110V BIDIR 3-SL
产品变化通告: Product Obsolescence Jun/2008
标准包装: 50
电压 - 击穿: 135V
电压 - 断路: 110V
电压 - 导通状态: 3V
电流 - 峰值脉冲(8 x 20µs): 300A
电流 - 峰值脉冲(10 x 1000µs): 100A
电流 - 保持 (Ih): 150mA
元件数: 2
电容: 74pF
封装/外壳: 径向 - 3 引线
包装: 管件
TISP3xxxH3SL Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 ° C (Unless Otherwise Noted)
Rating
‘3070
‘3080
‘3095
‘3115
‘3125
Symbol
Value
± 58
± 65
± 75
± 90
± 100
Unit
Repetitive peak off-state voltage, (see Note 1)
‘3135
‘3145
V DRM
± 110
± 120
V
‘3180
‘3210
‘3250
‘3290
‘3350
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 μ s (GR-1089-CORE, 2/10 μ s voltage wave shape)
8/20 μ s (IEC 61000-4-5, 1.2/50 μ s voltage, 8/20 current combination wave generator)
10/160 μ s (FCC Part 68, 10/160 μ s voltage wave shape)
5/200 μ s (VDE 0433, 10/700 μ s voltage wave shape)
± 145
± 160
± 190
± 220
± 275
500
300
250
220
0.2/310 μ s (I3124, 0.5/700 μ s voltage wave shape)
5/310 μ s (ITU-T K.20/21, 10/700 μ s voltage wave shape)
5/310 μ s (FTZ R12, 10/700 μ s voltage wave shape)
5/320 μ s (FCC Part 68, 9/720 μ s voltage wave shape)
10/560 μ s (FCC Part 68, 10/560 μ s voltage wave shape)
10/1000 μ s (GR-1089-CORE, 10/1000 μ s voltage wave shape)
I TSP
200
200
200
200
160
100
A
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
55
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
I TSM
di T /dt
T J
T stg
60
1
400
-40 to +150
-65 to +150
A
A/ μ s
° C
° C
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the TISP3xxxH3SL must be in thermal equilibrium.
3. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to the R or T
terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G
terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the
TISP3xxxH3SL returns to its initial conditions.
4. See Figure 10 for impulse current ratings at other temperatures. Above 85 ° C, derate linearly to zero at 150 ° C lead
temperature.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Figure 8 shows the R and T terminal current rating for
simultaneous operation. In this condition, the G terminal current will be 2xI TSM(t) , the sum of the R and T terminal currents. Derate
current values at -0.61 %/ ° C for ambient temperatures above 25 ° C.
JANUARY 1999 - REVISED JAN UARY 200 7
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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