参数资料
| 型号： | TISP3150F3P |
| 厂商： | Bourns Inc. |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | SURGE SUPP 120V BIDIR 8-DIP |
| 标准包装： | 50 |
| 电压 - 击穿： | 150V |
| 电压 - 断路： | 120V |
| 电压 - 导通状态： | 3V |
| 电流 - 峰值脉冲(8 x 20µs)： | 120A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 35A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 50pF |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 包装： | 管件 |
TISP3125F3, TISP3150F3, TISP3180F3
MEDIUM-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTORS
TISP31xxF3 (MV) Overvoltage Protector Series
Ion-Implanted Breakdown Region
Precise and Stable Voltage
D Package (Top View)
Low Voltage Overshoot under Surge
T
1
8
G
DEVICE
‘3125F3
‘3150F3
V DRM
V
100
120
V (BO)
V
125
150
NC
NC
R
2
3
4
7
6
5
G
G
G
‘3180F3
145
180
NC - No internal connection
Planar Passivated Junctions
Low Off-State Current <10 μ A
Device Symbol
Rated for International Surge Wave Shapes
T
R
Waveshape
2/10 μ s
8/20 μ s
10/160 μ s
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
I TSP
A
175
120
60
10/700 μ s
ITU-T K.20/21
FCC Part 68
50
G
SD3XAA
10/560 μ s
10/1000 μ s
FCC Part 68
GR-1089-CORE
45
35
Terminals T, R and G correspond to the
alternative line designators of A, B and C
............................................... UL Recognized Component
Description
These medium-voltage dual bidirectional thyristor protectors are designed to protect ground backed ringing central office, access and
customer premise equipment against overvoltages caused by lightning and a.c. power disturbances. Offered in three voltage variants to meet
battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in both polarities.
Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to switch. The
high crowbar holding current helps prevent d.c. latchup as the current subsides.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and
are virtually transparent to the system in normal operation.
How To Order
Device
Package
Carrier
Order As
TISP31xxF3
D, Small-o utline Tape And Reeled TISP31xxF3DR-S
Insert 1xx value corresponding to protection voltages of 125, 150 and 180
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关PDF资料 |
PDF描述 |
|---|---|
| TISP3150F3DR | SURGE SUPP 120V BIDIR 8-SOIC |
| TISP3145H3SL | SURGE SUPP 120V BIDIR 3-SL |
| SSW-146-01-G-S | CONN RCPT .100" 46POS SNGL GOLD |
| TISP3135H3SL | SURGE SUPP 110V BIDIR 3-SL |
| TISP3125H3SL | SURGE SUPP 100V BIDIR 3-SL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP3150F3PS | 制造商:Bourns Inc 功能描述: |
| TISP3150F3P-S | 功能描述:硅对称二端开关元件 Medium Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP3150F3SL | 功能描述:硅对称二端开关元件 Medium Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP3150F3SLS | 制造商:Bourns Inc 功能描述: |
| TISP3150F3SL-S | 功能描述:硅对称二端开关元件 Medium Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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