参数资料
型号: TISP3150F3P
厂商: Bourns Inc.
文件页数: 2/12页
文件大小: 0K
描述: SURGE SUPP 120V BIDIR 8-DIP
标准包装: 50
电压 - 击穿: 150V
电压 - 断路: 120V
电压 - 导通状态: 3V
电流 - 峰值脉冲(8 x 20µs): 120A
电流 - 峰值脉冲(10 x 1000µs): 35A
电流 - 保持 (Ih): 150mA
元件数: 2
电容: 50pF
封装/外壳: 8-DIP(0.300",7.62mm)
包装: 管件
TISP31xxF3 (MV) Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 ° C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, 0 ° C < T A < 70 ° C
‘3125F3
‘3150F3
V DRM
± 100
± 120
V
‘3180F3
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 ? resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
± 145
350
175
90
120
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0 ° C < T A < 70 ° C (see Notes 1 and 3)
50 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
I PPSM
I TSM
di T /dt
T J
T stg
60
55
38
50
50
45
35
4.3
250
-65 to +150
-65 to +150
A
A
A/ μ s
° C
° C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially, the TISP ? must be in thermal equilibrium with 0 ° C < T J <70 ° C. The surge may be repeated after the TISP ? returns to its
initial conditions.
3. Above 70 ° C, derate linearly to zero at 150 ° C lead temperature.
Electrical Characteristics for R and T Terminal Pair, TA = 25 ° C (Unless Otherwise Noted)
I DRM
I D
Parameter
Repetitive peak off-
state current
Off-state current
Test Conditions
V D = ± 2V DRM , 0 ° C < T A < 70 ° C
V D = ± 50 V
Min
Typ
Max
± 10
± 10
Unit
μ A
μ A
f = 100 kHz, V d = 100 mV , V D = 0,
C off
Off-state capacitance
Third terminal voltage = -50 V to +50 V
0.05
0.15
pF
(see Notes 4 and 5)
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关PDF资料
PDF描述
TISP3150F3DR SURGE SUPP 120V BIDIR 8-SOIC
TISP3145H3SL SURGE SUPP 120V BIDIR 3-SL
SSW-146-01-G-S CONN RCPT .100" 46POS SNGL GOLD
TISP3135H3SL SURGE SUPP 110V BIDIR 3-SL
TISP3125H3SL SURGE SUPP 100V BIDIR 3-SL
相关代理商/技术参数
参数描述
TISP3150F3PS 制造商:Bourns Inc 功能描述:
TISP3150F3P-S 功能描述:硅对称二端开关元件 Medium Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP3150F3SL 功能描述:硅对称二端开关元件 Medium Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP3150F3SLS 制造商:Bourns Inc 功能描述:
TISP3150F3SL-S 功能描述:硅对称二端开关元件 Medium Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA