参数资料
| 型号： | TISP5110H3BJR |
| 厂商： | Bourns Inc. |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | SURGE SUPP -80V UNIDIR DO-214AA |
| 标准包装： | 3,000 |
| 电压 - 击穿： | 110V |
| 电压 - 断路： | 80V |
| 电压 - 导通状态： | 3V |
| 电流 - 峰值脉冲(8 x 20µs)： | 300A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 100A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 240pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
TISP5xxxH3BJ Overvoltage Protection Series
Electrical Characteristics, TA = 25 ° C (Unless Otherwise Noted) (Continued)
Parameter
Test Conditions
Min Typ Max
Unit
I (BO)
V F
Breakover current
Forward voltage
dv/dt = -250 V/ms, R SOURCE = 300 ?
I F = 5 A, t W = 500 μ s
-150
-600
3
mA
V
dv/dt ≤ +1000 V/ μ s, Linear voltage ramp,
V FRM
Peak forward recovery voltage
Maximum ramp value = +500 V
di/dt = +20 A/ μ s, Linear current ramp,
5
V
Maximum ramp value = +10 A
V T
On-state voltage
I T = -5 A, t w = 500 μ s
-3
V
I H
Holding current
I T = -5 A, di/dt = +30 mA/ms
-150
-600
mA
dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, maximum ramp value < 0.85V DRM
-5
kV/ μ s
I D
Off-state current
V D = -50 V
T A = 85 ° C
-10
μ A
'5070H3BJ
'5080H3BJ
'5095H3BJ
300
280
260
420
390
365
f = 1 MHz, V d = 1 V rms, V D = -1 V
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
'5070H3BJ
'5080H3BJ
'5095H3BJ
240
214
140
140
260
245
225
335
300
195
195
365
345
315
C O
Off-state capacitance
(see Note 6)
f = 1 MHz, V d = 1 V rms, V D = -2 V
'5110H3BJ
'5115H3BJ
'5150H3BJ
205
180
120
285
250
170
pF
'5190H3BJ
'5070H3BJ
'5080H3BJ
'5095H3BJ
120
90
80
73
170
125
110
100
f = 1 MHz, V d = 1 V rms, V D = -50 V
f = 1 MHz, V d = 1 V rms, V D = -100 V
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
'5150H3BJ
'5190H3BJ
65
56
35
35
30
30
90
80
50
50
40
30
NOTE:
6. Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly
dependent on connection inductance.
Thermal Characteristics, T A = 25 ° C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
R θ JA
Junction to ambient thermal resistance
EIA/JESD51-3 PCB, I T = I TSM(1000)
(see Note 7)
265 mm x 210 mm populated linecard,
4-layer PCB, I T = I TSM(1000)
50
113
° C/W
NOTE:
7. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JANUARY 1998 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP5110H3BJR-S | 功能描述:硅对称二端开关元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP5115H3BJ | 制造商:Bourns Inc 功能描述:THYRISTOR TVS UNIDIRECTIONAL 115V |
| TISP5115H3BJR | 功能描述:硅对称二端开关元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP5115H3BJR-S | 功能描述:硅对称二端开关元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP5150H3BJ | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
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