参数资料
型号: TISP61089ASDR-S
厂商: Bourns Inc.
文件页数: 7/8页
文件大小: 0K
描述: PROTECTOR OVER VOLTAGE
标准包装: 2,500
电压 - 击穿: 64V
电压 - 断路: 120V
电流 - 峰值脉冲(10 x 1000µs): 30A
电流 - 保持 (Ih): 150mA
元件数: 2
电容: 100pF
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
TISP61089 Gated Protector Series
APPLICATIONS INFORMATION
Application Circuit (Continued)
protector. The TISP7xxxF3 protector has the same protection voltage for any terminal pair. This protector is used when the ring generator
configuration may be ground or battery-backed. For dedicated ground-backed ringing generators, the TISP3xxxF3 gives better protection as
its inter-conductor protection voltage is twice the conductor to ground value.
Relay contacts 3a and 3b connect the line conductors to the SLIC via the ’61089 protector. The protector gate reference voltage comes from
the SLIC negative supply (V BAT ). A 220 nF gate capacitor sources the high gate current pulses caused by fast rising impulses.
SLIC
PROTEC TOR
SLIC
SLIC
PROTEC TOR
SLIC
I K
Th5
'61089
I G
I F
Th5
'61089
C1
220 nF
V BAT
AI6XAHC
C1
220 nF
V BAT
AI6XAIC
Figure 4. Negative Overvoltage Condition
OVER-
Figure 5. Positive Overvoltage Condition
CURRENT
PROTEC TION
RING/TEST
PROTEC TION
TEST
RELAY
RING
RELAY
SLIC
RELAY
SLIC
PROTEC TOR
SLIC
TIP
WIRE
RSa
Th1
S3a
Th4
Th3
S1a
S2a
RING
RSb
Th2
Th5
WIRE
TISP
S3b
'61089
3xxxF3
OR
7xxxF3
S1b
S2b
C1
220 nF
V BAT
TEST
EQUIP-
MENT
RING
GENERATOR
AI6XAJC
Figure 6. Typical Application Circuit
NOVEMBER 1995 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数
参数描述
TISP61089ASDS 制造商:Bourns Inc 功能描述:
TISP61089ASD-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube
TISP61089B 制造商:Bourns Inc 功能描述:THYRISTOR TVS DUAL
TISP61089BD 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube
TISP61089BDR 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube