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参数资料
| 型号： | TISP61089BD-S |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | TISP61089B High Voltage Ringing SLIC Protector |
| 中文描述： | TISP61089B高压振铃用户接口保护 |
| 文件页数： | 7/22页 |
| 文件大小： | 411K |
| 代理商： | TISP61089BD-S |
OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61089B High Voltage Ringing SLIC Protector
SLIC Parameter Values
The table below shows some details of HV SLICs using multiple negative supply rails.
Manufacturer
INFINEON
LEGERITY
Unit
SLIC Series
SLIC-P
ISLIC
SLIC #
PEB 4266
79R241
79R101
79R100
Data Sheet Issue
14/02/2001
-/08/2000
-/07/2000
-/07/2000
Short Circuit Current
110
150
150
150
mA
V
BATH
max.
V
BATL
max.
AC Ringing for:
-155
-104
-104
-104
V
-150
-104
V
BATH
50
V
BATH
55
V
85
45
V rms
Crest Factor
1.4
1.4
1.4
1.25
V
BATH
V
BATR
-70
-90
-99
-99
V
-150
-36
-24
-24
V
R or T Power Max. < 10 ms
10
W
R or T Overshoot < 10 ms
TBD
TBD
-5
5
-10
5
-10
5
V
R or T Overshoot < 1 ms
-10
+10
V
R or T Overshoot < 1
μ
s
R or T Overshoot < 250 ns
-10
+30
-10
10
-15
8
-15
8
V
-15
15
-20
12
-20
12
V
Line Feed Resistance
20 + 30
50
50
50
Assumes -20 V battery voltage during ringing.
Legerity, the Legerity logo and ISLIC are the trademarks of Legerity, Inc. (formerly AMD’s Communication Products Division).
Other product names used in this publication are for identification purposes only and may be trademarks of their respective
companies.
From the table, the maximum supply voltage, V
BATH
, is -155 V. In terms of minimum voltage overshoot limits, -10 V and +8 V are needed for
1
μ
s and -15 V, +12 V are needed for 250 ns. To maintain these voltage limits over the temperature range, 25
°
C values of -12 V, +10 V are
needed for 250 ns.
It is important to define the protector overshoot under the actual circuit current conditions. For example, if the series line feed resistor was
40
, R1 in Figure 12, and Telcordia GR-1089-CORE 2/10 and 10/1000 first-level impulses were applied, the peak protector currents would be
56 A and 20 A. At the second-level, the 2/10 impulse current would be 100 A. Therefore, the protector voltage overshoot should be guaranteed
to not exceed the SLIC voltage ratings at 100 A, 2/10 and 20 A, 10/1000. In practice, as the 2/10 waveshape has the highest current (100 A)
and fastest di/dt (80 A/
μ
s) the overshoot level testing can restricted to the be 2/10 waveshape.
Using the table values for maximum battery voltage and minimum overshoot gives a protection device requirement of -170 V and +12 V from
the output to ground. There needs to be temperature guard banding for the change in protector characteristics with temperature. To cover
down to -40
°
C, the 25
°
C protector minimum values become -185 V (V
DRM
) on the cathode and -182 V (V
GKS
) on the gate.
This section covers four topics. First, it is explained why gated protectors are needed. Second, the voltage limiting action of the protector is
described. Third, how the withstand voltages of the TISP61089B junctions are set. Fourth, an example application circuit is described.
Purpose of Gated Protectors
Fixed voltage thyristor overvoltage protectors have been used since the early 1980s to protect monolithic SLICs (Subscriber Line Interface
Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. As the SLIC was usually powered
from a fixed voltage negative supply rail, the limiting voltage of the protector could also be a fixed value. The TISP1072F3 is a typical example
of a fixed voltage SLIC protector.
Gated Protectors
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089BGDR-S | 功能描述:PROTECTOR PROGRAMMABLE SLIC RoHS:是 类别:过电压，电流，温度装置 >> TVS - 晶闸管 系列:- 产品变化通告:Product Discontinuation 19/Jul/2012 标准包装:2,500 系列:- 电压 - 击穿:400V 电压 - 断路:320V 电压 - 导通状态:4V 电流 - 峰值脉冲(8 x 20µs):250A 电流 - 峰值脉冲(10 x 1000µs):80A 电流 - 保持 (Ih):150mA 元件数:1 电容:29pF 封装/外壳:DO-214AA，SMB 包装:带卷 (TR) |
| TISP61089BSDR-S | 功能描述:SCR PROTECTOR - QUAD PROGRAMMABLE RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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