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参数资料
| 型号： | TISP61089BD |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | TISP61089B High Voltage Ringing SLIC Protector |
| 中文描述： | TISP61089B高压振铃用户接口保护 |
| 文件页数： | 10/22页 |
| 文件大小： | 411K |
| 代理商： | TISP61089BD |
OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61089B High Voltage Ringing SLIC Protector
Gated Protectors (Continued)
Summary:
Two tests are needed to verify the protector junctions. Maximum current values for I
GKS
and I
D
are required at the specified applied
voltage conditions.
Testing transistor CB, SCR AK off state and diode reverse blocking:
The highest AK voltage occurs during the overshoot period of the
protector. To make sure that the SCR and diode blocking junctions do not break down during this period, a d.c. test for off-state current, I
D
,
can be applied at the overshoot voltage value. To avoid transistor CB current amplification by the transistor gain, the transistor base-emitter is
shorted during this test (see Figure 11).
0 V
Figure 10. Transistor CB and EB Verification
V
BATH
+ V
FRM
TISP
61089B
AI6XCE
0 V
K
B (G)
I
EB
I
CB
I
GKS
Figure 11. Off-State Current Verification
0 V
AI6XCF
K
B (G)
I
CB
V
(BO)
TISP
61089B
I
D(I)
I
D
A
I
D(I)
is the internal SCR value of I
D
I
R
Figure 12. Typical Application Circuit
TEST
RELAY
RING
RELAY
SLIC
RELAY
TEST
EQUIP-
MENT
RING
GENERATOR
S1a
S1b
R1a
R1b
RING
WIRE
TIP
WIRE
Th1
Th2
Th3
Th4
Th5
SLIC
SLIC
PROTECTOR
RING/TEST
PROTECTION
OVER-
CURRENT
PROTECTION
S2a
S2b
TISP
3xxxF3
OR
7xxxF3
S3a
S3b
AI6XAJB
V
BATH
TISP
61089B
C1
220 nF
相关PDF资料 |
PDF描述 |
|---|---|
| TISP61089BDR | TISP61089B High Voltage Ringing SLIC Protector |
| TISP61089BD-S | TISP61089B High Voltage Ringing SLIC Protector |
| TISP61089BDR-S | TISP61089B High Voltage Ringing SLIC Protector |
| TISP6L7591 | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP6L7591DR-S | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089BDR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089BDR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089BDR-T | 功能描述:SCR PROTECTOR - PROGRAMMABLE SLIC PROTECT RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089BDS | 制造商:Bourns Inc 功能描述: |
| TISP61089BD-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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