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参数资料
| 型号： | TISP61089BD |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | TISP61089B High Voltage Ringing SLIC Protector |
| 中文描述： | TISP61089B高压振铃用户接口保护 |
| 文件页数： | 3/22页 |
| 文件大小： | 411K |
| 代理商： | TISP61089BD |
OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61089B High Voltage Ringing SLIC Protector
Recommended Operating Conditions
Electrical Characteristics, TJ = 25
°
C (Unless Otherwise Noted)
Component
Min
Typ
Max
Unit
C
G
TISP61089B gate decoupling capacitor
100
220
nF
R
S
TISP61089B series resistor for GR-1089-CORE first-level surge survival
25
TISP61089B series resistor for GR-1089-CORE first-level and second-level surge survival
40
TISP61089B series resistor for GR-1089-CORE intra-building port surge survival
8
TISP61089B series resistor for K.20, K.21 and K.45 coordination with a 400 V primary
protector
10
Parameter
Test Conditions
Min
Typ
Max
Unit
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
T
J
= 25
°
C
T
J
= 85
°
C
-5
μ
A
μ
A
V
-50
V
(BO)
Breakover voltage
2/10
μ
s, I
TM
= -100 A, di/dt = -80 A/
μ
s, R
S
= 50
,
V
GG
= -100 V
2/10
μ
s, I
TM
= -100 A, di/dt = -80 A/
μ
s, R
S
= 50
,
V
GG
= -100 V,
(see Note 4)
-112
V
GK(BO)
Gate-cathode impulse
breakover voltage
12
V
V
F
Forward voltage
I
F
= 5 A, t
w
= 200
μ
s
3
V
V
FRM
Peak forward recovery
voltage
2/10
μ
s, I
F
= 100 A, di/dt = 80 A/
μ
s, R
S
= 50
,
(see Note 4)
10
V
I
H
Holding current
I
T
= -1 A, di/dt = 1A/ms, V
GG
= -100 V
-150
mA
I
GKS
Gate reverse current
V
GG
= V
GK
= V
GKRM
, V
KA
= 0
T
J
= 25
°
C
T
J
= 85
°
C
-5
μ
A
μ
A
mA
-50
I
GT
Gate trigger current
I
T
= -3 A, t
p(g)
≥
20
μ
s, V
GG
= -100 V
5
V
GT
Gate-cathode trigger
voltage
I
T
= -3 A, t
p(g)
≥
20
μ
s, V
GG
= -100 V
2.5
V
C
KA
Cathode-anode off-
state capacitance
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 5)
V
D
= -3 V
V
D
= -48 V
100
pF
50
pF
NOTES: 4. The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly dependent of the gate supply
voltage value (V
GG
).
5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
R
θ
JA
Junction to free air thermal resistance
T
A
= 25
°
C, EIA/JESD51-3 PCB, EIA/
JESD51-2 environment, P
TOT
= 1.7 W
120
°
C/W
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| TISP61089BDR-T | 功能描述:SCR PROTECTOR - PROGRAMMABLE SLIC PROTECT RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089BDS | 制造商:Bourns Inc 功能描述: |
| TISP61089BD-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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