参数资料
| 型号： | TISP61089BDR-T |
| 厂商： | Bourns Inc. |
| 文件页数： | 3/20页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR PROGRAMMABLE SLIC |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089B High Voltage Ringing SLIC Protector
Recommended Operating Conditions
Component
Min
Typ
Max
Unit
C G
R S
TISP61089B gate decoupling capacitor
TISP61089B series resistor for GR-1089-CORE first-level surge survival
TISP61089B series resistor for GR-1089-CORE first-level and second-level surge survival
TISP61089B series resistor for GR-1089-CORE intra-building port surge survival
TISP61089B series resistor for K.20, K.21 and K.45 coordination with a 400 V primary
protector
100
25
40
8
10
220
nF
?
?
?
?
Electrical Characteristics, TJ = 25 ° C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I D
Off-state current
V D = V DRM , V GK = 0
T J = 25 ° C
T J = 85 ° C
-5
-50
μ A
μ A
V (BO)
V GK(BO)
V F
V FRM
I H
Breakover voltage
Gate-cathode impulse
breakover voltage
Forward voltage
Peak forward recovery
voltage
Holding current
2/10 μ s, I TM = -100 A, di/dt = -80 A/ μ s, R S = 50 ? , V GG = -100 V
2/10 μ s, I TM = -100 A, di/dt = -80 A/ μ s, R S = 50 ? , V GG = -100 V,
(see Note 4)
I F = 5 A, t w = 200 μ s
2/10 μ s, I F = 100 A, di/dt = 80 A/ μ s, R S = 50 ? , (see Note 4)
I T = -1 A, di/dt = 1A/ms, V GG = -100 V
-150
-112
12
3
10
V
V
V
V
mA
I GKS
I GT
V GT
C KA
Gate reverse current
Gate trigger current
Gate-cathode trigger
voltage
Cathode-anode off-
state capacitance
V GG = V GK = V GKRM , V KA = 0
I T = -3 A, t p(g) ≥ 20 μ s, V GG = -100 V
I T = -3 A, t p(g) ≥ 20 μ s, V GG = -100 V
f = 1 MHz, V d = 1 V, I G = 0, (see Note 5)
T J = 25 ° C
T J = 85 ° C
V D = -3 V
V D = -48 V
-5
-50
5
2.5
100
50
μ A
μ A
mA
V
pF
pF
NOTES: 4. The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly dependent of the gate supply
voltage value (V GG ).
5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
R θ JA
Parameter
Junction to free air thermal resistance
Test Conditions
T A = 25 ° C, EIA/JESD51-3 PCB, EIA/
JESD51-2 environment, P TOT = 1.7 W
Min
Typ
Max
120
Unit
° C/W
OCTOBER 2000 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089BDS | 制造商:Bourns Inc 功能描述: |
| TISP61089BD-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089BGDR-S | 功能描述:PROTECTOR PROGRAMMABLE SLIC RoHS:是 类别:过电压，电流，温度装置 >> TVS - 晶闸管 系列:- 产品变化通告:Product Discontinuation 19/Jul/2012 标准包装:2,500 系列:- 电压 - 击穿:400V 电压 - 断路:320V 电压 - 导通状态:4V 电流 - 峰值脉冲(8 x 20µs):250A 电流 - 峰值脉冲(10 x 1000µs):80A 电流 - 保持 (Ih):150mA 元件数:1 电容:29pF 封装/外壳:DO-214AA，SMB 包装:带卷 (TR) |
| TISP61089BSDR-S | 功能描述:SCR PROTECTOR - QUAD PROGRAMMABLE RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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