参数资料
型号: TISP61089BDR-T
厂商: Bourns Inc.
文件页数: 8/20页
文件大小: 0K
描述: PROTECTOR PROGRAMMABLE SLIC
标准包装: 2,500
电压 - 击穿: 64V
电压 - 断路: 170V
电流 - 峰值脉冲(10 x 1000µs): 30A
电流 - 保持 (Ih): 150mA
元件数: 2
电容: 100pF
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
TISP61089B High Voltage Ringing SLIC Protector
Gated Protectors (Continued)
SLICs have become more sophisticated. To minimize power consumption, some designs automatically adjust the driver supply voltage to a
value that is just sufficient to drive the required line current. For short lines, the supply voltage would be set low, but for long lines, a higher
supply voltage would be generated to drive sufficient line current. The optimum protection for this type of SLIC would be given by a protection
voltage which tracks the SLIC supply voltage. This can be achieved by connecting the protection thyristor gate to the SLIC V BATH supply,
Figure 6. This gated (programmable) protection arrangement minimizes the voltage stress on the SLIC, no matter what value of supply voltage.
TIP
WIRE
600 ?
GENERATOR
SOURCE
RESISTANCE
600 ?
RING
WIRE
R1
40 ?
R2
40 ?
TISP61089B
SLIC
V BATL
SWITCHING MODE
POWER SUPPLY
I SLIC
Tx
A.C.
GENERATOR
0 - 600 V r.m.s.
C1
220 nF
I G
V BATH
I BATH
C2
D1
AI6XCC
Figure 6. TISP61089B Buffered Gate Protector (‘1089 Section 4.5.12 Testing)
SLIC
PROTECTOR
SLIC
SLIC
PROTECTOR
SLIC
I K
Th5
TISP
61089B
I G
I F
Th5
TISP
61089B
V BATH
AI6XAHB
C1
220 nF
V BATH
AI6XAIB
C1
220 nF
Figure 7. Negative Overvoltage Condition
Figure 8. Positive Overvoltage Condition
Operation of Gated Protectors
Figure 7 and Figure 8 show how the TISP61089B limits negative and positive overvoltages. Positive overvoltages (Figure 8) are clipped by the
antiparallel diode of Th5 and the resulting current is diverted to ground. Negative overvoltages (Figure 7) are initially clipped close to the SLIC
negative supply rail value (V BATH ). If sufficient current is available from the overvoltage, then Th5 will switch into a low voltage on-state
condition. As the overvoltage subsides the high holding current of Th5 prevents d.c. latchup. The protection voltage will be the sum of the gate
supply (V BATH ) and the peak gate-cathode voltage (V GK(BO) ). The protection voltage will be increased if there is a long connection between the
gate decoupling capacitor, C1, and the gate terminal. During the initial rise of a fast impulse, the gate current (I G ) is the same as the cathode
current (I K ). Rates of 80 A/ μ s can cause inductive voltages of 0.8 V in 2.5 cm of printed wiring track. To minimize this inductive voltage increase of
OCTOBER 2000 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数
参数描述
TISP61089BDS 制造商:Bourns Inc 功能描述:
TISP61089BD-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube
TISP61089BGDR-S 功能描述:PROTECTOR PROGRAMMABLE SLIC RoHS:是 类别:过电压,电流,温度装置 >> TVS - 晶闸管 系列:- 产品变化通告:Product Discontinuation 19/Jul/2012 标准包装:2,500 系列:- 电压 - 击穿:400V 电压 - 断路:320V 电压 - 导通状态:4V 电流 - 峰值脉冲(8 x 20µs):250A 电流 - 峰值脉冲(10 x 1000µs):80A 电流 - 保持 (Ih):150mA 元件数:1 电容:29pF 封装/外壳:DO-214AA,SMB 包装:带卷 (TR)
TISP61089BSDR-S 功能描述:SCR PROTECTOR - QUAD PROGRAMMABLE RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube
TISP61089D 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流(在 VDRM IDRM 下):5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流(Ih 最大值):75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube