参数资料
| 型号： | TISP61089HDMR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | SURGE PROT THYRIST 155V SLIC |
| 产品培训模块： | ESD Protection Products |
| 产品变化通告： | Gold to Copper Wire Change April 2009 |
| 产品目录绘图： | TISP61089 Pin Out TISP61089 Schematic |
| 标准包装： | 1 |
| 电压 - 工作： | -48V |
| 电压 - 箝位： | -57V |
| 技术： | 混合技术 |
| 电路数： | 2 |
| 应用： | SLIC |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 2379 (CN2011-ZH PDF) |
| 其它名称： | TISP61089HDMR-SDKR |
TISP61089HDM Overvoltage Protector
Description (Continued)
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC
negative supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state
condition. As the overvoltage subsides the high holding current of TISP61089HDM SCR helps prevent d.c. latchup.
The TISP61089HDM is designed to be used with a pair of Bourns ? B1250T fuses for overcurrent protection. Level 2 power fault compliance
requires the series overcurrent element to become open-circuit or high impedance. For equipment compliant to ITU-T recommendations K.20,
K.21 or K.45 only, the series resistor value is set by the coordination requirements. For coordination with a 400 V limit GDT, a minimum series
resistor value of 6.5 ? is recommended.
Absolute Maximum Ratings, TA = 25 ° C (Unless Otherwise Noted)
Repetitive peak off-state voltage, V GK = 0
Repetitive peak gate-cathode voltage, V KA = 0
Rating
Symbol
V DRM
V GKRM
Value
-170
-167
Unit
V
V
Non-repetitive peak impulse current (see Notes 1, 2 and 3)
10/1000 μ s (Telcordia GR-1089-CORE, Issue 3)
5/310 μ s (ITU-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 μ s)
100
150
10/360 μ s (Telcordia GR-1089-CORE, Issue 3)
1.2/50 μ s voltage waveshape (Telcordia GR-1089-CORE, Issue 3), including 3 ? non-inductive resistor
2/10 μ s (Telcordia GR-1089-CORE, Issue 3)
I PPSM
100
500
500
A
Non-repetitive peak on-state current, 50 Hz / 60 Hz (see Notes 1, 2, 3 and 4)
0.5 s
1s
7.7
6.1
2s
5s
30 s
900 s
Junction temperature
Storage temperature range
I TSM
T J
T stg
4.8
3.7
2.8
2.6
-40 to +150
-65 to +150
A
° C
° C
NOTES: 1. Initially the device must be in thermal equilibrium with T J = 25 ° C. The surge may be repeated after the device returns to its initial
conditions.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the
rated current value of an individual terminal pair). Ratings are obtained by using the gate circuitry as shown in Fig. 3.
3. Rated currents only apply if pins 1 & 8 (T ip) are connected together, pins 4 & 5 (Ring) are connected together and pins 6 & 7
(Anode) are connected together.
4. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm
printed wiring track widths.
Electrical Characteristics, TA = 25 ° C (Unless Otherwise Noted)
Parameter
Test Conditions
Min Typ Max Unit
I D
Off-state current
V D = V DRM , V GK = 0
T A = 25 ° C
T A = 85 ° C
-5
-50
μ A
10/1000 μ s, I TM = 100 A, V GG = -100 V
12
V GK(BO) Gate-cathode impulse breakover voltage 5/310 μ s, I TM = 150 A, V GG = -100 V
2/10 μ s, I TM = 200 A, V GG = -100 V (see Note 5)
12
20
V
V F
Forward voltage
I F = 5 A, t W = 200 μ s
3
V
10/1000 μ s, I F = 100 A, V GG = -100 V
6
V FRM
Peak forward recovery voltage
5/310 μ s, I F = 150 A, V GG = -100 V
7
V
2/10 μ s, I F = 200 A, V GG = -100 V (see Note 5)
10
MAY 2004 – REVISED AUGUST 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089LDR-S | 制造商:Bourns Inc 功能描述:THYRISTOR, SURGE PROTECTOR, -120V, SOIC-8; No. of Circuits:2; Thyristor Type:SLIC Protector; Thyristor Case:SOIC; No. of Pins:8; Breakover Voltage Vbo Max:-64V; Peak Off-State Voltage, Vdrm:-120V |
| TISP61089M | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:TISP61089M SLIC Overvoltage Protector |
| TISP61089MDR-S | 功能描述:PROTECTOR PROGRAMMABLE SLIC RoHS:是 类别:过电压，电流，温度装置 >> TVS - 晶闸管 系列:- 产品变化通告:Product Discontinuation 19/Jul/2012 标准包装:2,500 系列:- 电压 - 击穿:400V 电压 - 断路:320V 电压 - 导通状态:4V 电流 - 峰值脉冲(8 x 20µs):250A 电流 - 峰值脉冲(10 x 1000µs):80A 电流 - 保持 (Ih):150mA 元件数:1 电容:29pF 封装/外壳:DO-214AA，SMB 包装:带卷 (TR) |
| TISP61089P | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089PS | 制造商:Bourns Inc 功能描述: |
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