参数资料
| 型号： | TISP61089SDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR OVER VOLTAGE |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 100V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089D, TISP61089SD, TISP61089AD,
TISP61089ASD
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61089 Gated Protector Series
Overvoltage Protection for Negative Rail SLICs
2/10 Overshoot Voltage Specified
Dual Voltage-Tracking Protectors
- ‘61089 for Battery Voltages to.......................................... -75 V
- ‘61089A for Battery Voltages to ..................................... -100 V
- Low Gate Triggering Current ....................................... < 5 mA
- High Holding Current ............................................... > 150 mA
Rated for GR-1089-CORE and K.44 Impulses
Impulse Wave Shape I PPSM
Element
Diode
SCR
Package Options
I PP = 100 A, 2/10
V
8
12
Voltage
2/10
10/700
10/1000
Current
2/10
5/310
10/1000
A
120
40
30
- Surface Mount 8-pin Small-Outline
Line Feed-Thru Connection (D)
Shunt Version Connection (SD)
..................................................... UL Recognized Components
D Package Top View and Device Symbol for Feed-Thru Pin-Out
(Tip)
(Gate)
(Ring)
K1
G
NC
K2
1
2
3
4
8
7
6
5
K1 (Tip)
A
(Ground)
A
(Ground)
K2 (Ring)
K1
G
K1
A
A
NC - No internal connection
Terminal typical application names shown in
parenthesis
MD6XBDa
K2
K2
SD6XAEB
D Package Top View and Device Symbol for Shunt (SD) Pin-Out
(Tip)
(Gate)
K1
G
1
2
8
7
NC
A
(Ground)
K1
NC
3
6
A
(Ground)
A
(Ring)
K2
4
5
NC
G
A
MD6XBE
NC - No internal connection
Terminal typical application names shown in
parenthesis
K2
SD6XAU
How To Order
Device
TISP61089
TISP61089S
Package
D (Small-Outline)
D (Small-Outline)
Carrier
R?
R?
Order As
TISP61089DR-S
TISP61089SDR-S
Device
TISP61089A
TISP61089AS
Package
D (Small-Outline)
D (Small-Outline)
Carrier
R?
R?
Order As
TISP61089ADR-S
TISP61089ASDR-S
? Carrier R is Embossed Tape Reeled
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NOVEMBER 1995 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
? Carrier R is Embossed Tape Reeled
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相关代理商/技术参数 |
参数描述 |
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| TISP61511D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61511DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61511DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61511DS | 制造商:Bourns Inc 功能描述: |
| TISP61511D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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