参数资料
| 型号： | TISP61089SDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR OVER VOLTAGE |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 100V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089 Gated Protector Series
Recommended Operating Conditions
Component
Min
Typ
Max
Unit
C G
R S
Gate decoupling capacitor
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for GR-1089-CORE first-level and second-level surge survival
Series resistor for GR-1089-CORE intra-building port surge survival
Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
100
25
40
8
10
220
nF
?
?
?
?
Electrical Characteristics, TJ = 25 ° C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I D
Off-state current
V D = V DRM , V GK = 0
T J = 25 ° C
T J = 85 ° C
-5
-50
μ A
μ A
2/10 μ s, I PP = -56 A, R S = 45 ? , V GG = -48 V, C G = 220 nF
-57
V (BO)
Breakover voltage
2/10 μ s, I PP = -100 A, R S = 50 ? , V GG = -48 V, C G = 220 nF
1.2/50 μ s, I PP = -53 A, R S = 47 ? , V GG = -48 V, C G = 220 nF
-60
-60
V
1.2/50 μ s, I PP = -96 A, R S = 52 ? , V GG = -48 V, C G = 220 nF
2/10 μs, I PP = -56 A, R S = 45 ?, V GG = -48 V, C G = 220 nF
-64
9
V GK(BO)
Gate-cathode impulse
breakover voltage
2/10 μ s, I PP = -100 A, R S = 50 ? , V GG = -48 V, C G = 220 nF
1.2/50 μ s, I PP = -53 A, R S = 47 ? , V GG = -48 V, C G = 220 nF
12
12
V
1.2/50 μ s, I PP = -96 A, R S = 52 ? , V GG = -48 V, C G = 220 nF
16
V F
Forward voltage
I F = 5 A, t w = 200 μ s
3
V
2/10 μ s, I PP = 56 A, R S = 45 ? , V GG = -48 V, C G = 220 nF
6
V FRM
Peak forward recovery
voltage
2/10 μ s, I PP = 100 A, R S = 50 ? , V GG = -48 V, C G = 220 nF
1.2/50 μ s, I PP = 53 A, R S = 47 ? , V GG = -48 V, C G = 220 nF
8
8
V
1.2/50 μ s, I PP = 96 A, R S = 52 ? , V GG = -48 V, C G = 220 nF
12
I H
Holding current
I T = -1 A, di/dt = 1A/ms, V GG = -48 V
-150
mA
I GKS
Gate reverse current
V GG = V GK = V GKRM , V KA = 0
T J = 25 ° C
T J = 85 ° C
-5
-50
μ A
μ A
I GT
V GT
Q GS
Gate trigger current
Gate-cathode trigger
voltage
Gate switching charge
I T = -3 A, t p(g) ≥ 20 μ s, V GG = -48 V
I T = -3 A, t p(g) ≥ 20 μ s, V GG = -48 V
1.2/50 μ s, I PP = -53 A, R S = 47 ? , V GG = -48 V, C G = 220 nF
0.1
5
2.5
mA
V
μ C
C KA
Cathode-anode off-
state capacitance
f = 1 MHz, V d = 1 V, I G = 0, (see Note 3)
V D = -3 V
V D = -48 V
100
50
pF
pF
NOTES: 3. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
T A = 25 ° C, EIA/JESD51-3
R θ JA
Junction to free air thermal resistance
PCB, EIA/JESD51-2
D Package
120
° C/W
environment, P TOT = 1.7 W
NOVEMBER 1995 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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