参数资料
| 型号： | TISP6NTP2ADR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 5/7页 |
| 文件大小： | 0K |
| 描述： | SURGE PROT THYRIST 90V DUAL SLIC |
| 产品培训模块： | ESD Protection Products |
| 产品变化通告： | Wire Color Change May 2008 |
| 产品目录绘图： | TISP6NTP2(A,C)DR Schematic |
| 标准包装： | 1 |
| 电压 - 工作： | -50V |
| 电压 - 箝位： | -70V |
| 技术： | 混合技术 |
| 电路数： | 4 |
| 应用： | SLIC |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 2379 (CN2011-ZH PDF) |
| 其它名称： | TISP6NTP2ADR-SDKR |
TISP6NTP2A Programmable Protector
APPLICATIONS INFORMATION
Operation of Gated Protectors
Figure 2 and Figure 3 show how the TISP6NTP2A limits overvoltages. The TISP6NTP2A thyristor sections limit negative overvoltages and the
diode sections limit positive overvoltages.
R1A
R1B
SLIC
PROTECTOR
V BAT1
SLIC 1
R1A
R1B
SLIC
PROTECTOR
V BAT1
SLIC 1
C1
0V
C1
0V
R2A
I K
100 nF
TISP6NTP2A
SLIC 2
R2A
I F
100 nF
TISP6NTP2A
SLIC 2
R2B
V BAT2
C2
I G
0V
R2B
V BAT2
C2
I G
0V
AI6XBN
100 nF
AI6XBO
100 nF
Figure 2. Negative Overvoltage Condition
Figure 3. Positive Overvoltage Condition
Negative overvoltages (Figure 2) are initially clipped close to the SLIC negative supply rail value (VBAT) by the conduction of the transistor
base-emitter and the thyristor gate-cathode junctions. If sufficient current is available from the overvoltage, then the thyristor will crowbar into
a low voltage ground referenced on-state condition. As the overvoltage subsides, the high holding current of the crowbar thyristor prevents
d.c. latchup. The common gate of each thyristor pair is connected the appropriate SLIC battery feed voltage (VBAT1 or VBAT2).
The negative protection voltage, V(BO), will be the sum of the gate supply (VBAT) and the peak gate (terminal)-cathode voltage (VGT ). Under
a.c. overvoltage conditions VGT will be less than 2.5 V. The integrated transistor buffer in the TISP6NTP2A greatly reduces protectors source
and sink current loading on the VBAT supply. Without the transistor, the thyristor gate current would charge the VBAT supply. An electronic
power supply is not usually designed to be charged like a battery. As a result, the electronic supply would switch off and the thyristor gate
current would provide the SLIC supply current. Normally the SLIC current would be less than the gate current, which would cause the supply
voltage to increase and destroy the SLIC by a supply overvoltage. The integrated transistor buffer removes this problem.
Fast rising impulses will cause short term overshoots in gate-cathode voltage. The negative protection voltage under impulse conditions will
also be increased if there is a long connection between the gate decoupling capacitor and the gate terminal. During the initial rise of a fast
impulse, the gate current (IG ) is the same as the cathode current (IK ). Rates of 60 A/ μ s can cause inductive voltages of 0.6 V in 2.5 cm of
printed wiring track. To minimize this inductive voltage increase of protection voltage, the length of the capacitor to gate terminal tracking
should be minimized.
JUNE 1998 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关PDF资料 |
PDF描述 |
|---|---|
| MMD21-0441D1 | CONN RACK/PANEL 44POS 5A |
| MMD23-0341N1 | CONN RACK/PANEL 34POS 5A |
| TISP6NTP2CDR-S | SURGE PROT THYRIST 155VDUAL SLIC |
| MME21-0261R1 | CONN RACK/PANEL 26POS 5A |
| MMB23-0441C1 | CONN RACK/PANEL 44POS 5A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP6NTP2AD-S | 功能描述:SCR Quad Buffered PGate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP6NTP2B | 制造商: 功能描述: 制造商:undefined 功能描述: |
| TISP6NTP2BD | 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP6NTP2BDR | 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP6NTP2BDR-S | 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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