参数资料
| 型号： | TISP7260F3P |
| 厂商： | Bourns Inc. |
| 文件页数： | 18/19页 |
| 文件大小： | 0K |
| 描述： | SURGE SUPP 200V BIDIR 8-DIP |
| 标准包装： | 50 |
| 电压 - 击穿： | 260V |
| 电压 - 断路： | 200V |
| 电压 - 导通状态： | 5V |
| 电流 - 峰值脉冲(8 x 20µs)： | 175A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 45A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 3 |
| 电容： | 39pF |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 包装： | 管件 |
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Protection Voltage
The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the
rate of current rise, di/dt, when the TISP? device is clamping the voltage in its breakdown region. The V(BO) value under surge conditions can
be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge’s di/dt. An estimate of the di/dt can
be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T recommendation K.21 1.5 kV, 10/700 surge has an average dv/dt of 150 V/ μ s, but, as the rise is exponential, the
initial dv/dt is three times higher, being 450 V/ μ s. The instantaneous generator output resistance is 25 ? . If the equipment has an additional
series resistance of 20 ? , the total series resistance becomes 45 ? . The maximum di/dt then can be estimated as 450/45 = 10 A/ μ s. In
practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP?
breakdown region.
Capacitance
Off-State Capacitance
The off-state capacitance of a TISP? device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the dc voltage, VD,
and the ac voltage, Vd. All the capacitance values in this data sheet are measured with an ac voltage of 1 Vrms. When VD >> Vd, the capaci-
tance value is independent on the value of Vd. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the
effective capacitance is strongly dependent on connection inductance. For example, a printed wiring (PW) trace of 10 cm could create a circuit
resonance with the device capacitance in the region of 80 MHz.
Longitudinal Balance
Figure 35 shows a three terminal TISP? device with its equivalent “delta” capacitance. Each capacitance, CTG , CRG and CTR, is the true
terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T,
then CTG > CRG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (CTG -C RG). The line
capacitive unbalance is due to (CTG -CRG) and the capacitance shunting the line is CTR +CRG/2 .
Figure 35.
All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance
effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is
included.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP7260F3PS | 制造商:Bourns Inc 功能描述: |
| TISP7260F3P-S | 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP7260F3SL | 功能描述:硅对称二端开关元件 200V(DRM) 260V(BO) RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP7260F3SLS | 制造商:Bourns Inc 功能描述: |
| TISP7260F3SL-S | 功能描述:硅对称二端开关元件 200V(DRM) 260V(BO) RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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