参数资料
型号: TISP7260F3P
厂商: Bourns Inc.
文件页数: 3/19页
文件大小: 0K
描述: SURGE SUPP 200V BIDIR 8-DIP
标准包装: 50
电压 - 击穿: 260V
电压 - 断路: 200V
电压 - 导通状态: 5V
电流 - 峰值脉冲(8 x 20µs): 175A
电流 - 峰值脉冲(10 x 1000µs): 45A
电流 - 保持 (Ih): 150mA
元件数: 3
电容: 39pF
封装/外壳: 8-DIP(0.300",7.62mm)
包装: 管件
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Electrical Characteristics for all Terminal Pairs, T A = 25 ° C (Unless Otherwise Noted)
I DRM
Parameter
Repetitive peak off-
state current
Test Conditions
V D = V DRM , 0 ° C < T A < 70 ° C
Min
Typ
Max
± 10
Unit
μ A
‘7125F3
‘7150F3
‘7180F3
‘7240F3
± 125
± 150
± 180
± 240
V (BO)
Breakover voltage
dv/dt = ± 250 V/ms, R SOURCE = 300 ?
‘7260F3
± 260
V
‘7290F3
‘7320F3
‘7350F3
‘7380F3
‘7125F3
‘7150F3
± 290
± 320
± 350
± 380
± 143
± 168
V (BO)
Impulse breakover
voltage
dv/dt ≤ ± 1000 V/ μ s, Linear voltage ramp,
Maximum ramp value = ± 500 V
di/dt = ± 20 A/ μ s, Linear current ramp,
Maximum ramp value = ± 10 A
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
± 198
± 269
± 289
± 319
± 349
V
‘7350F3
‘7380F3
± 379
± 409
I (BO)
Breakover current
dv/dt = ± 250 V/ms, R SOURCE = 300 ?
± 0.1
± 0.8
A
V T
I H
dv/dt
I D
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
I T = ± 5 A, t W = 100 μ s
I T = ± 5 A, di/dt = - /+30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V DRM
V D = ± 50 V
f = 1 MHz, V d = 1 V rms, V D = 0
‘7125 thru ‘7180
‘7240 thru ‘7380
± 0.15
±5
37
31
± 5
± 10
48
41
V
A
kV/ μ s
μ A
f = 1 MHz,
f = 1 MHz,
V d = 1 V rms, V D = -1 V
V d = 1 V rms, V D = -2 V
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
40
34
36
30
52
44
47
39
C off
Off-state capacitance
f = 1 MHz,
V d = 1 V rms, V D = -5 V
‘7125 thru ‘7180
‘7240 thru ‘7380
31
24
40
31
pF
f = 1 MHz,
f = 1 MHz,
V d = 1 V rms, V D = -50 V
V d = 1 V rms, V D = -100 V
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
17
13
14
10
23
17
18
13
f = 1 MHz, V d = 1 V rms, V DTR = 0
(see Note 4)
‘7125 thru ‘7180
‘7240 thru ‘7380
20
17
27
23
NOTE
4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First six capacitance values, with bias V D , are
for the R-G and T-G terminals only. The last capacitance value, with bias V DTR , is for the T-R terminals.
Thermal Characteristics
R θ JA
Parameter
Junction to free air thermal resistance
Test Conditions
P tot = 0.8 W, T A = 25 ° C
5 cm 2 , FR4 PCB
Min
Typ
Max
160
Unit
° C/W
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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TISP7260F3PS 制造商:Bourns Inc 功能描述:
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TISP7260F3SL 功能描述:硅对称二端开关元件 200V(DRM) 260V(BO) RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP7260F3SLS 制造商:Bourns Inc 功能描述:
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