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参数资料
| 型号： | TLV2342Y |
| 厂商： | Texas Instruments, Inc. |
| 英文描述： | LinCMOSE LOW-VOLTAGE HIGH-SPEED OPERATIONAL AMPLIFIERS |
| 中文描述： | LinCMOSE低压高速运算放大器 |
| 文件页数： | 2/34页 |
| 文件大小： | 519K |
| 代理商： | TLV2342Y |
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TLV2342, TLV2342Y, TLV2344, TLV2344Y
LinCMOS
LOW-VOLTAGE HIGH-SPEED
OPERATIONAL AMPLIFIERS
SLOS194 – FEBRUARY 1997
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate
LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low input
bias currents. These parameters combined with good ac performance make the TLV234x effectual in
applications such as high-frequency filters and wide-bandwidth sensors.
To facilitate the design of small portable equipment, the TLV234x is made available in a wide range of package
options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has
significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only
1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The
TLV234x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these
devices as exposure to ESD may result in the degradation of the device parametric performance.
TLV2342Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2342. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4
×
4 MILS MINIMUM
TJmax = 150
°
C
TOLERANCES ARE
±
10%.
ALL DIMENSIONS ARE IN MILS.
+
–
1OUT
1IN+
1IN–
VDD
(8)
(6)
(3)
(2)
(5)
(1)
(7)
(4)
VDD–/GND
+
–
2OUT
2IN+
2IN–
59
72
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(1)
相关PDF资料 |
PDF描述 |
|---|---|
| TLV2344ID | LinCMOSE LOW-VOLTAGE HIGH-SPEED OPERATIONAL AMPLIFIERS |
| TLV2344Y | LinCMOSE LOW-VOLTAGE HIGH-SPEED OPERATIONAL AMPLIFIERS |
| TLV2361(中文) | Single High-Performance, Low-Voltage OP AMP(高性能，可编程低电压单运放) |
| TLV2362(中文) | Dual High-Performance, Low-Voltage OP AMP(高性能，可编程低电压双运放) |
| TLV2432(中文) | Advanced Lincmos Rail-TO-Rail Output Wide-Input-Voltage Dual OP AMP(宽输入电压，低功耗，中速，高输出驱动双运放) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TLV2344 | 制造商:TI 制造商全称:Texas Instruments 功能描述:LinCMOSE LOW-VOLTAGE HIGH-SPEED OPERATIONAL AMPLIFIERS |
| TLV2344ID | 功能描述:运算放大器 - 运放 Quad LiNCMOS RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| TLV2344IDG4 | 功能描述:运算放大器 - 运放 Quad LiNCMOS RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| TLV2344IN | 功能描述:运算放大器 - 运放 Quad LiNCMOS RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| TLV2344INE4 | 功能描述:运算放大器 - 运放 Quad LinCMOS Lo-Vltg High-Speed RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
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