参数资料
型号: TLV341IDBVR
厂商: Texas Instruments
文件页数: 1/36页
文件大小: 0K
描述: IC OPAMP GP R-R 2.3MHZ SOT23-6
标准包装: 1
放大器类型: 通用
电路数: 1
输出类型: 满摆幅
转换速率: 1 V/µs
增益带宽积: 2.3MHz
电流 - 输入偏压: 1pA
电压 - 输入偏移: 300µV
电流 - 电源: 75µA
电流 - 输出 / 通道: 115mA
电压 - 电源,单路/双路(±): 1.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: SOT-23-6
供应商设备封装: SOT-23-6
包装: 标准包装
产品目录页面: 871 (CN2011-ZH PDF)
其它名称: 296-17682-6
TLV341, TLV342, TLV342S, TLV344
LOW-VOLTAGE RAIL-TO-RAIL OUTPUT CMOS OPERATIONAL AMPLIFIERS
WITH SHUTDOWN
SLVS568C JANUARY 2005 REVISED NOVEMBER 2007
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D 1.8-V and 5-V Performance
D Low Offset (A Grade)
1.25 mV Max (25
5C)
1.7 mV Max (40
5C to 1255C)
D Rail-to-Rail Output Swing
D Wide Common-Mode Input Voltage
Range . . . 0.2 V to (V+ 0.5 V)
D Input Bias Current...1 pA (Typ)
D Input Offset Voltage . . . 0.3 mV (Typ)
D Low Supply Current ...70 A/Channel
D Low Shutdown Current . . .
10 pA (Typ) Per Channel
D Gain Bandwidth . . . 2.3 MHz (Typ)
D Slew Rate ...0.9 V/s (Typ)
D Turn-On Time From Shutdown
...5
s (Typ)
D Input Referred Voltage Noise (at 10 kHz)
. . . 20 nV/
/Hz
D ESD Protection Exceeds JESD 22
2000-V Human-Body Model (A114-A)
200-V Machine Model (A115-A)
D Applications
Cordless/Cellular Phones
Consumer Electronics (Laptops, PDAs)
Audio Pre-Amp for Voice
Portable/Battery-Powered Electronic
Equipment
Supply Current Monitoring
Battery Monitoring
Buffers
Filters
Drivers
TLV341
DBV (SOT-23) OR DCK (SC-70) PACKAGE
(TOP VIEW)
1
2
3
6
5
4
IN+
GND
IN
V+
SHDN
OUT
1
2
3
4
8
7
6
5
1OUT
1IN
1IN+
GND
V+
2OUT
2IN
2IN+
TLV342
D (SOIC) OR DGK (MSOP) PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
1IN
1IN+
V+
2IN+
2IN
2OUT
4OUT
4IN
4IN+
GND
3IN+
3IN
3OUT
TLV344
D (SOIC) OR PW (TSSOP) PACKAGE
(TOP VIEW)
TLV341
DRL (SOT-563) PACKAGE
(TOP VIEW)
1
2
3
6
5
4
GND
IN+
IN
V+
SHDN
OUT
TLV342
RUG (QFN) PACKAGE
(TOP VIEW)
1IN
2IN
NC No internal connection
1IN+
GND
NC
2IN+
1OUT
NC
V+
2OUT
1
2
3
5
7
9
10
8
46
TLV342S
RUG (QFN) PACKAGE
(TOP VIEW)
1IN
2IN
NC No internal connection
1IN+
GND
SHDN
2IN+
1OUT
NC
V+
2OUT
1
2
3
5
7
9
10
8
46
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
2007, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
相关PDF资料
PDF描述
RMCP2010JT36K0 RES POWER 36K OHM 1W 5% 2010 SMD
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TLV341IDBVRE4 功能描述:运算放大器 - 运放 Low-Voltage R-To-R Output CMOS RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel
TLV341IDBVRG4 功能描述:运算放大器 - 运放 Lo Vltg Rail to Rail Output CMOS Op Amp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel
TLV341IDBVT 功能描述:运算放大器 - 运放 Low-Voltage R-To-R Output CMOS RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel
TLV341IDBVTE4 功能描述:运算放大器 - 运放 Low-Voltage R-To-R Output CMOS RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel
TLV341IDBVTG4 功能描述:运算放大器 - 运放 Lo Vltg Rail to Rail Output CMOS Op Amp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel