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参数资料
| 型号： | TMMDB3TG |
| 厂商： | 意法半导体 |
| 英文描述： | DIAC |
| 中文描述： | 移民部 |
| 文件页数： | 2/4页 |
| 文件大小： | 51K |
| 代理商： | TMMDB3TG |
TMMDB3
2/4
Symbol
Parameter
Test Conditions
Value
Unit
V
BO
Breakover voltage *
C = 22nF **
MIN.
28
V
TYP.
32
MAX.
36
I V
BO1
- V
BO2
I
Breakover voltage
symmetry
C = 22nF **
MAX.
± 3
V
V
Dynamic breakover
voltage *
V
BO
and V
F
at
10mA
MIN.
5
V
V
O
Output voltage *
see diagram 2
(R=20
)
MIN.
5
V
I
BO
Breakover current *
C = 22nF **
MAX.
50
μ
A
tr
Rise time *
see diagram 3
MAX.
2
μ
s
I
R
Leakage current *
V
R
= 0.5 V
BO
max
MAX.
10
μ
A
* Applicable to both forward and reverse directions.
** Connected in parallel to the device.
ELECTRICAL CHARACTERISTICS
(Tj = 25°C unless otherwise specified)
TMM DB 3
Breakover voltage
3:V
typ = 32V
BO
Diac Series
MINIMELF
ORDERING INFORMATION
Part Number
Marking
Weight
Base Quantity
Packing Mode
TMMDB3
(None)
0.04 g
2500
Tape & Reel
OTHER INFORMATION
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